Allicdata Part #: | S29GL512N11FFVR20-ND |
Manufacturer Part#: |
S29GL512N11FFVR20 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL |
More Detail: | FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Pa... |
DataSheet: | S29GL512N11FFVR20 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | GL-N |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (64M x 8, 32M x 16) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
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Memory is an important part of computer systems and networks. The S29GL512N11FFVR20 is a versatile, high performance, high density Non-Volatile Memory (NVM) device. It is used to store and retrieve data which needs to be kept even if the power is shut off.
The S29GL512N11FFVR20 is a Flash-based device, meaning that the information stored in it is non-volatile, meaning that even when power is removed, the data stored in it will still remain intact. The device is organized into 32 blocks of 32KiB each, and each block can contain up to 64KiB of data when written to a page. The code stored in the device can also be updated or modified, provided the necessary tools are used.
This makes the S29GL512N11FFVR20 useful in a number of applications, such as embedded systems, portable devices and other electronic equipment. Its features also make it suitable for use in advanced motor controllers, industrial equipment, medical devices, automotive systems, industrial robots and a wide range of other applications.
The S29GL512N11FFVR20 also has an on-chip soft 18-bit or 27-bit ECC, which can be used to detect single-bit errors and correct them accordingly. This is useful for applications that require reliable data transmission and storage, since it can detect errors that might otherwise go unnoticed.
The working principle of the S29GL512N11FFVR20 is based on the Charge Trap Flash (CTF) technology. CTF uses a layer of silicon dioxide (SiO2) as a charge trap layer, which is located between the floating gate and the substrate. The charge stored in this layer creates a voltage that creates the signal required for data storage. This makes the memory incredibly durable and can survive extreme temperature variations, high radiation levels, and is even resistant to gamma radiation.
The S29GL512N11FFVR20 is also extremely dense, allowing it to store more data than traditional Flash memory. This makes the device suitable for applications that require large amounts of data to be stored, such as data logging systems or complex software programs.
In summary, the S29GL512N11FFVR20 is a versatile, high performance, high density memory device that is suitable for a wide range of applications, from embedded systems to large data logging applications. Its technology makes it incredibly durable and allows it to store large amounts of data. It is also resistant to radiation, making it suitable for applications in extreme conditions.
The specific data is subject to PDF, and the above content is for reference
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