S29GL512S10TFI023

Series:	GL-S
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Mb (32M x 16)
Write Cycle Time - Word, Page:	60ns
Access Time:	100ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	56-TSOP

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Introduction:

The S29GL512S10TFI023 is an advanced 8-pin single component memory device specifically designed for high throughput applications, providing both large non-volatile and small write/read access times. It is suitable for applications that require high memory performance and random access, such as real-time automation, data acquisition and control systems. The device includes a serial interface, multiple sector erase, a paged command and data buffer, and read across multiple pages.

Application Field:

The S29GL512S10TFI023 memory device is ideally suited for applications that demand high memory performance and random access. It is suitable for applications with large datasets, such as high-speed automation and control systems, real-time monitoring systems, data acquisition and machine learning. The device is also ideal for applications that require multiple data buffers, creating an efficient access to various data points scattered throughout the memory. This can result in significant performance gains in applications such as medical diagnostics or automated testing systems, where multiple independent data stores need to be accessed in parallel.

Working Principle:

The S29GL512S10TFI023 memory device implements a three-layer architecture, combining software and hardware functionality to enable high-speed access. The device operates at up to 133MHz, allowing for fast execution of read and write operations. A serial interface is used at the highest level, making it easy to control multiple devices, while the middle layer of the architecture provides an optimized command interface.The device employs an advanced paging protocol that allows for commands and data to be sent across multiple pages. This enables fast read/write operations even for large memory blocks. The device also features a sector erase operation, making it possible to quickly erase large regions of the memory in-place, without the need to read in data from the flash memory.

Conclusion:

The S29GL512S10TFI023 memory device is well suited for applications that demand high performance, random access and multiple data buffers. Its three-layer architecture combines software and hardware functionality to enable high-speed access. The device operates at up to 133MHz, making it ideal for applications that require fast data access and multiple erase operations. In addition, its serial interface makes it easy to control multiple S29GL512S10TFI023 devices in parallel. As such, the device is an ideal choice for applications that require fast access to multiple memory locations in a reliable and efficient manner.

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