| Allicdata Part #: | S29GL512S11TFAV10-ND |
| Manufacturer Part#: |
S29GL512S11TFAV10 |
| Price: | $ 6.70 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC FLASH 512M PARALLEL 56TSOP |
| More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 1... |
| DataSheet: |  S29GL512S11TFAV10 Datasheet/PDF |
| Quantity: | 1000 |
| 91 +: | $ 6.08892 |
Specifications
| Series: | GL-S |
| Packaging: | Tray |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NOR |
| Memory Size: | 512Mb (32M x 16) |
| Write Cycle Time - Word, Page: | 60ns |
| Access Time: | 110ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.65 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package: | 56-TSOP |
Description
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The S29GL512S11TFAV10 is a 1-Gigabit (Gb) Single Level Cell (SLC) NAND Flash Memory device, which is ideally suited for advanced solid-state storage applications such as industrial, automotive, and consumer applications. This device operates from 1.8V and 3.3V, and has an access time of 30ns. It also has a built-in error correction code (ECC) and a Data Mirroring feature.This device is designed as a non-volatile memory solution that provides fast and secure data storage. Its Non-volatile NAND cells provide all the advantages associated with Flash Memory, including lower power consumption, smaller form factors, and faster system write/erase operations.The S29GL512S11TFAV10 is available in a 48-ball 2mmx3mm BGA package, and is ideal for advanced storage-intensive applications and applications that require quick data retrieval and storage. It is also suitable for applications that have critical data stored in memory, such as real-time tracking and control systems and secure code storage.Working PrincipleThe S29GL512S11TFAV10 uses NAND Flash technology to store and retrieve data. NAND Flash is a type of non-volatile memory storage technology, which means that it retains data even when powered down.When the power is applied to the device, the user can write data to the memory cells in the NAND string. This data is then stored in the NAND cells until it is erased or written to again.NAND Flash also offers a system-level security benefit by providing error-correction and protection against random pattern noise. The built-in ECC circuitry provides strong protection against data corruption even in harsh industrial and automotive conditions.The S29GL512S11TFAV10 device also provides a Data Mirroring feature, which creates two copies of the same data in two different NAND strings. This feature provides an additional layer of data protection, ensuring that critical data is kept safe.ConclusionThe S29GL512S11TFAV10 is a 1-Gigabit Single Level Cell (SLC) NAND Flash memory device which is ideally suited for advanced solid-state storage applications such as industrial, automotive, and consumer applications. With its fast access time and error-correction capabilities, it is ideal for storage-intensive applications, real-time tracking and control systems, and secure code storage. Its Data Mirroring feature ensures that critical data is double-referenced and protected by ECC. The S29GL512S11TFAV10 is a great solution for applications that need reliable and quick data storage.
The specific data is subject to PDF, and the above content is for reference
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