| Allicdata Part #: | 1274-1165-ND |
| Manufacturer Part#: |
S29GL512S11TFIV10 |
| Price: | $ 6.30 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC FLASH 512M PARALLEL 56TSOP |
| More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 1... |
| DataSheet: | S29GL512S11TFIV10 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 6.30000 |
| 10 +: | $ 6.11100 |
| 100 +: | $ 5.98500 |
| 1000 +: | $ 5.85900 |
| 10000 +: | $ 5.67000 |
| Series: | GL-S |
| Packaging: | Tray |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NOR |
| Memory Size: | 512Mb (32M x 16) |
| Write Cycle Time - Word, Page: | 60ns |
| Access Time: | 110ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.65 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package: | 56-TSOP |
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The S29GL512S11TFIV10 is a 512M bit (64Mbyte)Phase Change Dual-In-Line (PDIP) memory device, manufactured by Spansion, Inc. It is a low-cost, high-performance memory device, suitable for use in a variety of applications ranging from communications to consumer electronics. The S29GL512S11TFIV10 is a one-time programmable (OTP) non-volatile memory device, meaning that it retains its data even when the power is removed, making it ideal for applications where battery-backed memory is not required. The device also has a number of features that make it suitable for use in embedded systems, including a 1.8V power supply, a wide operating temperature range, and a 1.5KB page size for faster programming.
The S29GL512S11TFIV10 supports two different kinds of applications. First, it can be used as a stand-alone memory device, with a simple write-and-read operation. The device also supports an SPI serial interface, making it possible to program and read the device with an external microcontroller. Second, the device can be used as an embedded memory solution, with an array of memory cells arranged in rectangular blocks and each cell containing a single bit of information. The memory cells can then be programmed or read in parallel or serial fashion, making it suitable for use in various applications.
The S29GL512S11TFIV10 works by storing data in a special phase change material known as Memory under a laser programming (MULP). The device contains a small laser that is used to alter the structure of the material, changing its electrical properties. This alters the electrical charge of the material, allowing it to store or release data. The data stored in the MULP can be programmed and read with an external microcontroller, device driver, or other program. The device is then able to retain its data even when the power is removed, making it ideal for use in embedded systems.
The S29GL512S11TFIV10 is an ideal choice for use in a variety of embedded systems applications, including transponders, RFID systems, medical devices, automotive electronics, audio/video systems, and more. Its low-cost, high-performance memory functionality, combined with its wide operating temperature range, makes it an ideal choice for a variety of applications. Additionally, with its built-in features, such as a 1.5KB page size, the device is easy to program and use.
The specific data is subject to PDF, and the above content is for reference
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S29GL512S11TFIV10 Datasheet/PDF