S29GL512T10FHI013 Allicdata Electronics
Allicdata Part #:

S29GL512T10FHI013-ND

Manufacturer Part#:

S29GL512T10FHI013

Price: $ 4.31
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NOR Memory ICFLASH - NOR Memory IC 512Mbit Para...
More Detail: N/A
DataSheet: S29GL512T10FHI013 datasheetS29GL512T10FHI013 Datasheet/PDF
Quantity: 14170
1 +: $ 4.31000
10 +: $ 4.18070
100 +: $ 4.09450
1000 +: $ 4.00830
10000 +: $ 3.87900
Stock 14170Can Ship Immediately
$ 4.31
Specifications
Series: GL-T
Packaging: --
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mbit
Clock Frequency: --
Write Cycle Time - Word, Page: 60ns
Access Time: 100 ns
Memory Interface: Parallel
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)
Base Part Number: S29GL512
Description

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    The S29GL512T10FHI013 IC chip is a high-performance, low-power and cost-effective single-voltage memory device developed by ESMT for use in embedded systems applications. It is a standard-size single-voltage SRAM with an 8-bit interface and a variety of features that make it ideal for embedded and industrial applications. 

    The S29GL512T10FHI013 is a high-performance, low-power and cost-effective single-voltage memory device designed for use in embedded systems applications. This chip contains one million bits of memory, with 32 8-bit bytes per page and 2048 pages of memory. It is available in a 5-volt version and an 8-bit version, and has both a single-voltage and dual-voltage operation software option. 

    The S29GL512T10FHI013 is a high-speed and low-power memory device that provides users with faster access times than traditional SRAMs. It provides an access time of 0.8ns, which is faster than most traditional SRAMs. As a result, users can enjoy increased system performance and more efficient power management. The chip also supports dynamic power savings in a system, enabling users to save energy, increase the lifespan of the device, and reduce system costs. The S29GL512T10FHI013 provides users with improved reliability, higher density and higher levels of reliability and data integrity than most other SRAMs. 

    This chip is designed for long-term, reliable operation in high-performance, embedded systems applications. It features an advanced error correction system, which ensures that data stored in the memory is accurate and secure. Furthermore, the chip is designed for extended temperature applications and can operate over a wide temperature range. 

    The S29GL512T10FHI013 offers a variety of features, including 8-bit and 32-bit registers, 128-bit wide data bus, auto-deselect functions, a variety of clock speeds and a write-protect feature. In addition, the chip is designed with bus-skew support capabilities, which enable users to adjust the timing parameters of the chip to optimize performance. The chip also includes multiple chip select pins and power supply sequencing options. It is also compatible with a variety of systems, including Flash and microcontroller-based Systems. 

    One of the primary benefits of the S29GL512T10FHI013 is its low-power consumption and ability to operate at high speed. This makes the chip an ideal choice for embedded applications. Additionally, its advanced features, such as an error correction system and bus-skew support, improve data integrity and reliability. These features also help to reduce system costs, as well as improve performance. Overall, the S29GL512T10FHI013 IC chip is a high-performance, low-power and cost-effective single-voltage memory device developed for use in embedded systems applications. Its fast access times and advanced features make it an ideal choice for embedded applications. Additionally, its low-power consumption and superior reliability make it an attractive choice for industrial applications. By utilizing this chip, users can enjoy increased system performance, extended temperature capability and improved data integrity.


The specific data is subject to PDF, and the above content is for reference

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