S29GL512T11FAIV10 Allicdata Electronics
Allicdata Part #:

S29GL512T11FAIV10-ND

Manufacturer Part#:

S29GL512T11FAIV10

Price: $ 4.84
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 512M PARALLEL
More Detail: FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 11...
DataSheet: S29GL512T11FAIV10 datasheetS29GL512T11FAIV10 Datasheet/PDF
Quantity: 1000
180 +: $ 4.39628
Stock 1000Can Ship Immediately
$ 4.84
Specifications
Series: GL-T
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Write Cycle Time - Word, Page: 60ns
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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S29GL512T11FAIV10 Application Field and Working Principle

The S29GL512T11FAIV10 is a type of memory device classified as static random-access memory (SRAM) and is widely used as a data storage device in many fields. It is known for its fast read/write speeds, low power consumption and large storage capacity. It is a single-transistor device, which can be used as an alternative to a dual-transistor device.

In terms of its application field, it is widely used in the development of embedded systems, such as in the automotive industry, telecommunications industry, medical industry, industrial automation, and aerospace. It is also used in automation controllers, programmable logic controllers, industrial computers and electronic instruments. Moreover, it is also popularly used in industrial applications such as server farms and high-speed data storage.

The working principle of the S29GL512T11FAIV10 is based on the basic principles of static random-access memory. This architecture utilizes a single transistor for all read/write operations. The transistor, which is known as a bit cell, is designed such that it can store one bit of data (either a “1” or a “0”).The single bit cell is connected to a single address line and can be accessed or updated by the user. The memory controller is responsible for managing the memory address space, and it controls the configuration of the memory. This includes the selection of the address space, configuration of memory timing, as well as the timing of each read/write operation.

The S29GL512T11FAIV10 memory also adopts a three-level cell configuration. This is where each bit cell is configured to store three bits of data (simultaneously storing “0”, “1” and “X”). This essentially doubles the read/write speed of the memory and increases its density. The advantage of three-level cell architecture is that it allows for better utilization of the memory address space.

The S29GL512T11FAIV10 memory is also equipped with a special feature that is known as self-refresh mode. This mode keeps the memory static even when the power is turned off and it allows the stored information to remain stored even when the power is cut off. This feature helps to conserve battery life and is one of the reasons why this memory has been so popularly used in industrial and embedded applications.

Overall, the S29GL512T11FAIV10 memory is a popular choice for embedded systems and industrial applications due to its fast read/write speeds, low power consumption, single transistor design and three-level cell architecture. Additionally, its self-refresh mode allows for extended battery life and data storage retention. With so many advantages, it is easy to see why the S29GL512T11FAIV10 memory is so widely used in the development of embedded systems and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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