S34SL04G200BHI000

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The S34SL04G200BHI000 is a type of memory device designed to store data reliably even when power is lost. It is a specialty storage medium used by many industries, including computing, telecommunications, automotive, and aerospace. Commonly known as Flash EEPROM, this memory is non-volatile and has a long-term operational life. Understanding the application field and working principle of the S34SL04G200BHI000 provides insight into the function, reliability, and power management of this type of memory.

Application Field

The S34SL04G200BHI000 is a type of NAND Flash Memory that is used for many applications needing long-term data retention and reliable operation. In computing, this type of memory is used in a variety of data-intensive applications, including high-performance computing, mission-critical systems, and high-speed data acquisition systems. It is also used in mobile equipment, where it is highly valued for its low power consumption and fast read access. In the telecommunications field, this type of memory is valuable for its ability to store a large amount of data quickly and reliably.

In the automotive sector this type of memory is especially valuable. It is used in areas such as control systems and navigation, where it helps maintain consistent operation in harsh environments. It is also used in engine control systems to store operational data and enable improved fuel economy, reducing emissions. Additionally, the S34SL04G200BHI000 is found in a variety of aerospace applications, where its ability to store large amounts of data reliably helps ensure consistent and safe operation of the machinery.

Working Principle

The S34SL04G200BHI000 is a type of non-volatile memory, meaning it does not require power to maintain stored data. This type of memory is based on the Charge-Latched (CL) technology, which uses charge-trapping elements to store electrical charges at specific locations in a memory array. These stored charges represent binary bits, which are stored and retrieved by applying voltage to the charge-trapping elements.

The SP34SL04G200BHI000 uses two signal lines to control the charge-trapping elements, allowing for data to be read and written directly. One signal line carries the programming voltage, which is used to write data to the charge-trapping elements, while the other signal carries the sensing voltage, which is used to read data from the elements. This allows for fast and efficient read/write operations with minimal power consumption.

An important benefit of the S34SL04G200BHI000 is its low power consumption. When the device is inactive, it requires very little current, which helps extend battery life in mobile applications. It also has high data retention, as the charge-trapping elements can retain data for up to 10 years. This ensures that the memory remains reliable even in harsh environments where power outages occur frequently.

Conclusion

The S34SL04G200BHI000 is a type of non-volatile memory that uses the Charge-Latched technology to store electrical charges in a memory array. This memory is used in a variety of applications due to its low power consumption and reliable long-term data retention. This type of memory is especially valuable for industries such as computing, telecommunications, automotive, and aerospace, where consistent operation is needed in order to ensure safety and efficiency.

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