S34SL04G200BHV003 Allicdata Electronics
Allicdata Part #:

S34SL04G200BHV003-ND

Manufacturer Part#:

S34SL04G200BHV003

Price: $ 7.02
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 4G PARALLEL
More Detail: FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 25...
DataSheet: S34SL04G200BHV003 datasheetS34SL04G200BHV003 Datasheet/PDF
Quantity: 1000
2300 +: $ 6.38385
Stock 1000Can Ship Immediately
$ 7.02
Specifications
Series: SL-2
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Write Cycle Time - Word, Page: --
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Description

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The S34SL04G200BHV003 is a type of flash memory that is used in a wide variety of applications. It is a non-volatile memory, meaning it retains its contents even when power is lost. The S34SL04G200BHV003 is an ideal choice for applications that require a high level of reliability and endurance, such as automotive systems, safety systems and medical equipment.

The S34SL04G200BHV003 is designed to provide high reliability, high speed, and low power consumption. It is available in a variety of package sizes, including VFQFN, WSON, USON, SOP, and WLCSP. It offers 4Gbit capacity per device, with access times of 20µs. It also has an 8-bit wide bus interface and an output enable (OE) pin.

The S34SL04G200BHV003 operates on a 3.3V dual power supply, with a low active power consumption of 1.1mW and a typical standby power consumption of 0.3mW. It is available in both a standard and a temperature-extended (TE) version. The TE version can withstand temperatures of up to 155°C. The S34SL04G200BHV003 supports various programming and erase functions, including data and bit-program, full-chip erase, and block erase. It also supports various voltages for program and erase operations, and supports both on-chip and external erase operations.

The working principle of the S34SL04G200BHV003 is based on flash technology, whereby data can be written, read, and erased. The flash memory cell consists of two transistors, a control gate, and a floating gate. When a positive voltage is applied to the control gate of the cell, electrons accumulate on the floating gate. These electrons form a charge that is stored and can be read or written to. When the voltage is removed, the data is retained.

The S34SL04G200BHV003 is suitable for a wide range of applications, including automotive, industrial and consumer electronics. It is used in automotive applications such as engine control, sensor data logging, and infotainment systems. It is also used in industrial applications such as metering and instrumentation, automation, and building control systems. The S34SL04G200BHV003 is also used in consumer electronics, such as mobile phones, tablets, digital cameras, and personal digital assistants.

In conclusion, the S34SL04G200BHV003 is a type of flash memory that is suitable for a wide range of applications, including automotive, industrial and consumer electronics. It is a non-volatile memory, meaning it retains its contents even when power is lost. The S34SL04G200BHV003 is designed to provide high reliability, high speed, and low power consumption. It supports various programming and erase functions, and operates on a 3.3V dual power supply. The working principle of the S34SL04G200BHV003 is based on flash technology, whereby data can be written, read, and erased.

The specific data is subject to PDF, and the above content is for reference

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