Allicdata Part #: | S34SL04G200BHI003-ND |
Manufacturer Part#: |
S34SL04G200BHI003 |
Price: | $ 5.85 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 4G PARALLEL |
More Detail: | FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 25... |
DataSheet: | S34SL04G200BHI003 Datasheet/PDF |
Quantity: | 1000 |
2300 +: | $ 5.31987 |
Series: | SL-2 |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 4Gb (512M x 8) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is an important component of modern computers, offering the ability to store information for later use. The S34SL04G200BHI003 is a type of memory used in the construction of contemporary computers. This article will discuss the application field and working principle of the S34SL04G200BHI003.
About S34SL04G200BHI003
The S34SL04G200BHI003 is a type of non-volatile flash memory manufactured by Toshiba for use in mobile devices. It was designed to be a small, low-power memory that offers high storage capacity. The S34SL04G200BHI003 provides the highest possible memory capacity without sacrificing the performance of mobile devices when compared to other solutions, making it an ideal choice for mobile applications.
Application Field
The S34SL04G200BHI003 is most commonly used in mobile devices with limited memory capacity, such as smartphones and tablets. It is also used in digital cameras, navigation devices, and other portable multimedia players. The S34SL04G200BHI003 has a high data transfer rate, making it suitable for recording high-definition video and audio. As it is non-volatile, data is retained even if the device loses power. Additionally, its low-power consumption makes it an ideal choice for mobile devices.
Working Principle
The S34SL04G200BHI003 utilizes NAND flash technology to store data. NAND flash is a type of non-volatile memory, which means that data is retained even if the device is powered down. The S34SL04G200BHI003 stores data in blocks of 128 pages of data. Each page is composed of 14 pieces of 8 bits each, giving each block a total of 1,024 bits. The device can store up to 16,384 such blocks of information, meaning a total storage capacity of up to 8GB.
Data is written to the S34SL04G200BHI003 via a process known as programming. During programming, the data is arranged into 28 pieces of 16 bits each. The data is then written to the device in blocks of 128 pages. Once data is written to the device, it cannot be erased or modified. To modify the data, it must be rewritten to the device in an erasing/programming cycle.
The S34SL04G200BHI003 is designed to be an efficient, low-power memory device. To conserve power, the device enters a low-power idle state when not in use. The device can be exited from this state via a wakeup command, which serves to quickly resume data processing. The device also features an advanced power-saving technology called SmartMCCTM, which is capable of automatically entering and exiting low-power idle states in order to conserve energy.
Conclusion
The S34SL04G200BHI003 is a type of non-volatile flash memory used in mobile devices. It offers high storage capacity and low-power consumption, making it an ideal choice for mobile applications. The device utilizes NAND flash technology to store data in blocks of 128 pages. Data is written to the device in an erasing/programming cycle and can be quickly resumed via a wakeup command. With its efficient power-saving technology, the S34SL04G200BHI003 is a reliable and efficient choice for mobile memory needs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
S34SL04G200BHI003 | Cypress Semi... | 5.85 $ | 1000 | IC FLASH 4G PARALLELFLASH... |
S34SL02G200BHV000 | Cypress Semi... | 6.06 $ | 1000 | IC FLASH 2G PARALLELFLASH... |
S34SL04G200BHI000 | Cypress Semi... | 6.71 $ | 1000 | IC FLASH 4G PARALLELFLASH... |
S34SL04G200BHV003 | Cypress Semi... | 7.02 $ | 1000 | IC FLASH 4G PARALLELFLASH... |
S34SL04G200BHV000 | Cypress Semi... | 8.05 $ | 1000 | IC FLASH 4G PARALLELFLASH... |
S34SL01G200BHV000 | Cypress Semi... | 3.87 $ | 1000 | IC FLASH 1G PARALLELFLASH... |
S34SL02G200BHI003 | Cypress Semi... | 4.35 $ | 1000 | IC FLASH 2G PARALLELFLASH... |
S34SL01G200BHI000 | Cypress Semi... | 3.33 $ | 1000 | IC FLASH 1G PARALLELFLASH... |
S34SL01G200BHV003 | Cypress Semi... | 3.35 $ | 1000 | IC FLASH 1G PARALLELFLASH... |
S34SL01G200BHI003 | Cypress Semi... | 3.0 $ | 1000 | IC FLASH 1G PARALLELFLASH... |
S34SL02G200BHI000 | Cypress Semi... | 5.06 $ | 1000 | IC FLASH 2G PARALLELFLASH... |
S34SL02G200BHV003 | Cypress Semi... | 5.21 $ | 1000 | IC FLASH 2G PARALLELFLASH... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...