S3M V6G

Series:	--
Part Status:	Active
Diode Type:	Standard
Current - Average Rectified (Io):	3A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	1.5µs
Current - Reverse Leakage @ Vr:	10µA @ 1000V
Capacitance @ Vr, F:	60pF @ 4V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	DO-214AB, SMC
Supplier Device Package:	DO-214AB (SMC)
Operating Temperature - Junction:	-55°C ~ 150°C

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The S3M V6G series is a range of single-stage, polarized, high voltage diodes for rectification in device designs. It is designed to provide high voltage switching of large power and current levels in the most demanding environments. The S3M V6G series is suitable for applications such as high-voltage rectification, high-voltage polarity change, high-side rectification with voltage stresses up to 6kV, and is also suitable for refrigerator & water pump motor drives, converter bridges, and other consumer applications that require both high performance and reliability. The S3M V6G series is constructed using epitaxial silicon, with a lightly doped substrate. This construction helps to reduce the effects of temperature and operating voltages, resulting in improved efficiencies and extended operating life. The S3M V6G series has a forward voltage drop of 1.2V and a reverse capacitance of 10pF. The series also includes low inductance diodes and a range of forward and reverse temperature coefficients. For added protection, the S3M V6G series features a hermetically sealed package and junction coating which reduces the risk of contamination and moisture. The working principle of the S3M V6G series is based on P-N junction rectification. This allows for the low voltage power from a single source to be effectively rectified, creating a reliable and robust DC output. The P-N junction works due to the differences in charge density between the positive and negative materials. When the P-N junction is in reverse bias, the charges are separated, resulting in a high electrical resistance, thus blocking any current flow. When forward biased, the charges become recombined and the P-N junction allows for the current to flow in one direction. The P-N junction also serves as a voltage reference. When a voltage is applied, the P-N junction compensates for the differences in charge concentration, resulting in increased current flow. This will affect the overall resistance across the junction, and thus, will affect the voltage drop. The voltage drop is a direct function of the current, and this can be used to regulate the output voltage. The main advantage of the S3M V6G series over other rectifiers is its ability to handle higher voltages with greater efficiency and reliability. The series can also handle a wider range of temperature conditions, making it ideal for various consumer applications. In addition, the series also features low capacitance, low inductance, and low reverse leakage. These characteristics result in improved regulatory compliance, higher reliability, and improved thermal performance. Overall, the S3M V6G series is a high-performance range of single-stage, polarized, high voltage diodes for rectification in device designs. The series is designed to provide high voltage switching of large power and current levels in the most demanding environments, making it suitable for various consumer applications. Additionally, the series feature low capacitance, low inductance, and low reverse leakage, allowing for improved regulatory compliance, higher reliability, and improved thermal performance.

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