Allicdata Part #: | S5BV6G-ND |
Manufacturer Part#: |
S5B V6G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 5A DO214AB |
More Detail: | Diode Standard 100V 5A Surface Mount DO-214AB (SMC... |
DataSheet: | S5B V6G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.06682 |
Series: | -- |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5µs |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The S5B V6G is a single rectifier diode, suitable for applications involving power management. The product is characterized by its advantage of efficient power conversion with its low power consumption. It is mainly suitable for high voltage rectification, the widely adopted 600V avalanche energy technology, the rapid recovery of avalanche energy, the low forward voltage and reverse recovery time, the efficiency of power conversion, the low power consumption, the easy installation and maintenance and the long lifetime.
The S5B V6G can achieve high efficiency by a large area of avalanche-impact-particles. Even when the operating voltage is very high, the device can still work safely. This diode can also provide higher reliability through a high temperature range and a low reverse leakage current in a high-temperature environment. Moreover, due to its wide range of surge current capability, the device is highly suitable for applications involving power supplies, such as automotive applications.
The working principle of the S5B V6G is based on the tunnel effect. In this type of diode, a high electric field is generated within the junction between the n-type material and the p-type material. The tunneling effect causes electrons to tunnel through the junction resulting in a turn-on of current with a very low voltage drop. The current flow will then increase exponentially with the voltage increase until it reaches a certain breakdown voltage.
In addition to the tunnel effect, the S5B V6G also offers several other features, including fast reverse recovery time, low power consumption, and high surge current capability. These features provide the device with a distinct advantage in applications involving power management and automotive applications. Furthermore, the device is designed to provide maximum reliability under extreme conditions.
The S5B V6G is designed for application in devices like power supplies, motor controllers, automotive lighting, rectifiers and converters, solar and wind power converters, inverters, and more. It is well suited for applications where the need for an efficient power conversion and management is critical. Additionally, its surge current capability makes the device an ideal choice for applications involving power supplies.
Overall, the S5B V6G is an excellent choice for power management applications. It offers excellent features such as fast reverse recovery time, low power consumption, and high surge current capability. Additionally, it is designed to provide maximum reliability even in extreme conditions. As such, the S5B V6G is suitable for a wide range of applications, including automotive and energy conversion.
The specific data is subject to PDF, and the above content is for reference
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