Allicdata Part #: | S79FL256SDSMFBG03-ND |
Manufacturer Part#: |
S79FL256SDSMFBG03 |
Price: | $ 3.33 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC 256 MB FLASH MEMORY |
More Detail: | Memory IC |
DataSheet: | S79FL256SDSMFBG03 Datasheet/PDF |
Quantity: | 1000 |
1450 +: | $ 3.03203 |
Series: | * |
Part Status: | Active |
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S79FL256SDSMFBG03 application field and working principle
Memory technology is an important foundation for modern digital system. Among the types of memory technology, S79FL256SDSMFBG03 is one of the most widely used. This article will describe the application scenarios and working principles of S79FL256SDSMFBG03 in detail.
What is S79FL256SDSMFBG03?
S79FL256SDSMFBG03 is a type of flash Memory, also known as NAND Flash. It is an integrated NAND Flash memory with a high level of integration, which integrates a multitude of NAND Flash memory components and control logic.
Application field of S79FL256SDSMFBG03
S79FL256SDSMFBG03 is widely used in various electronic products and embedded systems. For example, it is often used in mobile phones and other portable electronic devices. It is also widely used in high-performance industrial embedded systems, such as industrial robots, automation equipment and medical imaging systems.
In addition, S79FL256SDSMFBG03 is a key component in the storage of embedded systems that require high reliability. In these types of applications, flash memory can ensure the system can run stably and reliably, at the same time, the flash memory also helps to reduce the overall cost of the system.
Working Principle of S79FL256SDSMFBG03
The working principle of S79FL256SDSMFBG03 is based on the idea of storing information into a number of discrete cells. Each cell can be programmed with one or more bits, and allows for fast and reliable read/write operations.
When a cell is programmed, a voltage is applied to the control gate of the cell to create an electric field, which causes electrons to tunnel through the thin gate oxide to the floating gate. This operation creates an electric charge on the floating gate, allowing the cell to store a bit of data.
When a read operation is performed on the cell, a voltage is applied to the drain and the floating gate, which allows the electrons to tunnel from the floating gate back to the control gate. This process will cause current to flow from source to drain, depending on the charge on the floating gate.
This process is repeated for all other cells, allowing fast and reliable reading and writing of data. It is also important to note that, S79FL256SDSMFBG03 has a very robust power failure protection. In case of a power disruption, or a sudden power drop, the information stored in the cells will not be lost.
Conclusion
In conclusion, S79FL256SDSMFBG03 is a type of NAND Flash Memory, widely used in mobile phones, embedded systems and other electronic products. Thanks to its integrated architecture and highly reliable read/write operations, S79FL256SDSMFBG03 has become a key component in many systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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S79FL256SDSMFBG03 | Cypress Semi... | 3.33 $ | 1000 | IC 256 MB FLASH MEMORYMem... |
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