S79FL512SDSMFVG00 Allicdata Electronics
Allicdata Part #:

S79FL512SDSMFVG00-ND

Manufacturer Part#:

S79FL512SDSMFVG00

Price: $ 6.15
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 512M SPI 80MHZ
More Detail: FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I...
DataSheet: S79FL512SDSMFVG00 datasheetS79FL512SDSMFVG00 Datasheet/PDF
Quantity: 1000
240 +: $ 5.59335
Stock 1000Can Ship Immediately
$ 6.15
Specifications
Series: FL-S
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Description

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Memory: S79FL512SDSMFVG00

Application Field

The S79FL512SDSMFVG00 is a non-volatile flash memory device, manufactured by STMicroelectronics. Its main application field is to provide reliable storage in embedded systems, such as electronic control units, smart metering, and automotive electronics.

The S79FL512SDSMFVG00 combines the high performance of a standard parallel NOR flash interface with the low power and cost benefits from a serial flash. It features a wide operating voltage range from 2.7V to 3.6V and a write endurance rating of > 100K cycles.

This memory device is also used in consumer electronic products and in industrial applications, such as point of sale terminals, medical electronics, factory automation, alarm and triggering systems. The low-power feature combined with large erase blocks and low cost provide good optimization of production costs and RFID-support.

Working Principle

The working principle of the S79FL512SDSMFVG00 is the same as that of any other NOR or NAND Flash device. It has an internal array of floating-gate transistors, which are grouped into arrays of bit cells that can store individual bits of data. Each bit cell can store a value of either 0 or 1.

Data is written to the flash device by first setting the appropriate bit-cell (write) voltages and then programming the cells by applying a high voltage. The data written is non-volatile, meaning it will remain in the flash device even after the power is shut off.

Data is read from the flash device in much the same way. The appropriate read voltages are applied and the bit cells are programmed with the desired bit pattern. The data is then retrieved from the flash device.

The S79FL512SDSMFVG00 also has many additional features, such as user programmable OTP memory, protection against accidental write operations and read protection against malicious code. It also has a high speed interface, which enables data transfers at speeds of up to 10 Megabit/second.

Conclusion

The S79FL512SDSMFVG00 is a versatile and reliable non-volatile flash memory device. It is used in a variety of embedded systems, consumer electronics and industrial applications, thanks to its wide operating voltage range, high endurance and low power consumption. Its reading and writing performance also make it a popular choice for applications that require fast data transfer speeds.

The specific data is subject to PDF, and the above content is for reference

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