S79FL512SDSMFBG03

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Memory is an important component of a computer system and plays a key role in its business activities. Therefore, the application field and working principle of memory must be considered when making a computer system. S79FL512SDSMFBG03 is a NAND flash single supply memory chip suitable for low-density EEPROM applications. The following will explain in detail the application field and working principle of S79FL512SDSMFBG03.

Application Field of S79FL512SDSMFBG03

S79FL512SDSMFBG03 is a low-density NAND flash memory chip, which is generally used in industrial and automotive fields. With its wide operating temperature range, ECC error correction capability, and flash memory cell, S79FL512SDSMFBG03 is highly recommended for applications that require reliable data storage, such as data logging, instrumentation and system management. It supports range of applications requiring larger than serial EEPROM densities. Furthermore, its integrated SST serial flash memory controller makes it a convenient way to fulfill the system requirements.

Working Principle of S79FL512SDSMFBG03

S79FL512SDSMFBG03 NAND flash memories use a two-transistor memory cell to store each bit of data. An erase operation is used to reset all cells to the same binary "1" state, while programming of a single bit uses a charge pump to push the voltage level of a given cell, turning it into a "0". To ensure data integrity, the memory cell array is checked and error correction is carried out whenever required by an ECC mechanism. Additionally, a bad-block indicative and bit-level error detection system verifies any ECC errors and invalid bits.

In order to read the memory content, a column-level read operation is performed. This consists of: (1) grounding the Control Gate of the selected cell for the duration of the read cycle; (2) driving a voltage on the bit line from the stuck node of the selected cell; (3) sensing the bit line voltage through the access transistor. The voltage read is compared to a read reference to set the data bit value.

S79FL512SDSMFBG03 is also designed to limit the amount of current drawn from the supply, allowing the device to operate from a single supply of 3.2V to 3.6V. The memory is operated by a simple three-wire bus interface and supports standard commands, asynchronous half-page (x8) read and page (x16) programming.

Conclusion

In summary, S79FL512SDSMFBG03 is a low-density NAND flash memory chip suitable for industrial and automotive applications. It uses a two-transistor memory cell to store each bit of data and also supports advanced features, such as ECC error correction capability, integrated SST serial flash memory controller, and bad-block indicative and bit-level error detection system. In addition, its three-wire bus interface enables simple and standard commands, asynchronous half-page (x8) read and page (x16) programming.

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