Allicdata Part #: | S8KCV6G-ND |
Manufacturer Part#: |
S8KC V6G |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 800V 8A DO214AB |
More Detail: | Diode Standard 800V 8A Surface Mount DO-214AB (SMC... |
DataSheet: | S8KC V6G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.08613 |
Series: | -- |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 8A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 800V |
Capacitance @ Vr, F: | 48pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes are simple two-terminal devices which are used in countless applications and come in many different types. One such type is the S8KC V6G rectifier diode, a commonly used single rectifier diode. This article will discuss the application fields and working principle of the S8KC V6G.
The S8KC V6G is a general-purpose single rectifier diode with a maximum repetitive reverse voltage of 800V and a non-repetitive peak reverse voltage of 8kV. It is designed to handle high surge current with its high peak current capability and low forward voltage drop.
The S8KC V6G is used for a variety of applications, including power supply circuit protection, powerline isolation, battery charging, and efficient power conversion. It is also commonly used for switching, voltage rectification for home appliances, and automotive circuit protection applications. For these applications the diode is used in the reverse-biased junction, permitting the current to flow in the reverse direction from the anode to the cathode while blocking current in the opposite direction.
The working principle of the S8KC V6G is based on the semiconductor junction diode. A basic diode is composed of two different pieces of semiconductor material which are joined together at the junction. The material which forms the anode is known as a p-type (positive) semiconductor, and the material forming the cathode is known as an n-type (negative) semiconductor. When the diode is in forward bias, the junction between the p-type and n-type materials conducts current from the anode to the cathode. When the diode is in reverse bias, current is blocked due to their depletion zones.
In terms of absorption current, the S8KC V6G has an absorption current of 0.5uA, which means that even at high temperatures, the S8KC V6G can handle high surge currents. The majority of the reverse current is recirculated between cathode and anode, which results in low overall power dissipation.
The S8KC V6G also boasts a high insulation resistance and noise immunity, as well as a low reverse leakage current. This ensures that high quality power is supplied to the connected devices even in harsh conditions. Furthermore, the diode has a high peak current capability, allowing it to handle high surge currents without compromising its performance.
In conclusion, the S8KC V6G is a robust and efficient single rectifier diode which is used in a number of applications. Its features, including its high surge current capability, low forward voltage drop, and low reverse leakage current, make it an ideal choice for a variety of applications. Furthermore, its high insulation resistance and noise immunity ensure high quality power is supplied to connected devices.
The specific data is subject to PDF, and the above content is for reference
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