Allicdata Part #: | S8KCHM6G-ND |
Manufacturer Part#: |
S8KCHM6G |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 800V 8A DO214AB |
More Detail: | Diode Standard 800V 8A Surface Mount DO-214AB (SMC... |
DataSheet: | S8KCHM6G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.08824 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 985mV @ 8A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 800V |
Capacitance @ Vr, F: | 48pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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A S8KCHM6G diode is a semiconductor device composed of a single crystal piece of silicon or germanium layers that act as an insulator and an electrode layer. It is used in a variety of applications, including signal-processing, communications, and power-control. In general, the S8KCHM6G diode performs rectification, which is the conversion of alternating current (AC) to direct current (DC). Many other types of diodes also perform rectification, but the S8KCHM6G has some distinct advantages.
The S8KCHM6G diode has a low forward voltage, which reduces energy losses during the rectification process. A low forward voltage also allows the diode to operate at higher temperatures. Additionally, the S8KCHM6G diode has a fast forward recovery time, meaning that it quickly recharges its charge carriers after switching off the current. This helps reduce the impact of switched-mode power supplies on electronic systems.
The working principle of the S8KCHM6G diode involves four primary factors. First, the diode is polarized, meaning that current only flows in one direction. This is accomplished by the diode’s construction. Second, the forward voltage drop occurs, which is the voltage required to turn on the diode. This voltage drop is determined by the doping process used to manufacture the diode. Third, the reverse voltage drop causes current to leak from the diode in the reverse direction when the anode is more positive than the cathode. Lastly, the reverse recovery time occurs when the diode is turned off; this is the time it takes for the diode to re-charge its carriers and return to its off state.
The S8KCHM6G diode finds a myriad of applications. It is used in high-power, high-frequency systems and high-voltage circuits because of its low forward voltage, fast forward recovery time, and high reverse breakdown voltage. It is also used in switching power supplies, digital circuitry, and other high-frequency electronics. This diode is also popular in radio frequency applications such as broadcast and entertainment systems and satellite transmission.
The S8KCHM6G diode is a versatile and reliable device ideal for both commercial and industrial applications. Its unique traits, such as its low forward voltage, fast forward recovery time, and high reverse breakdown voltage, make it an optimal choice for many electronics systems. With its broad range of applications, the S8KCHM6G diode is sure to be a useful tool in any engineer’s toolkit.
The specific data is subject to PDF, and the above content is for reference
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