S99GL512P10TFIR20

Series:	GL-P
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Mb (32M x 16)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	56-TSOP (18.4x14)

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Introduction

S99GL512P10TFIR20 is a memory device from a specialist manufacturer. It is particularly designed for applications related to low-power embedded systems, where high-performance storage is needed. This style of memory device (alternatively referred to as embedded flash, embedded RAM or e-RAM) has a wide variety of applications, and its working principle can be understood as follows.

Application Fields

S99GL512P10TFIR20 is most suitable for use in applications such as industrial control, transportation, smart home and medical equipment that require fast and cost-effective storage. It is designed to reduce the number of storage connections required in order to reduce the overall system power draw, as well as increase system reliability while ensuring real-time performance.The device is well suited to applications that require a memory solution that can keep up with rapid updates, or where high level of performance is required in order to meet the requirements of the system. It is also ideal for applications that require a low-power solution, since this device reduces power draw significantly compared to conventional RAM.

Working Principle

The S99GL512P10TFIR20 memory chip utilizes a unique combination of DRAM and NAND Flash memory based on an advanced die-stacking technology. This technology provides the highest reliability amongst non-volatile memories, and takes advantage of the complementary characteristics of each type of memory for improved performance.The device uses a high-speed SRAM interface to quickly move data between memory blocks, thereby enabling simultaneous access to both types of memory. The device\'s typical cycle time is about twice as fast as regular flash memory, and its bus speed is twice as fast as that of conventional memory.In addition, this device has built-in Error Correcting Code (ECC) and Error Detection Code (EDC) support, which allows hardware-level data reliability and accuracy. The on-die SRAM controller provides low-level device management, while the optional NAND Flash controller supports multi-plane operations and rapid data reading.

Conclusion

The S99GL512P10TFIR20 memory chip is a powerful device that has been specifically designed for embedded systems applications. Its combination of DRAM and NAND Flash memory makes it an ideal choice for reducing overall system power draw, increasing reliability and performance, and providing high-speed, accurate data processing. It is also suitable for applications where low-power solutions are needed.

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