S99GL032N0050

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S99GL032N0050 is a low-power, non-volatile memory product developed by Macronix. It is an embedded flash memory with a built-in controller that allows the interface to a microcontroller, providing very high storage capacity with low power consumption. The device offers a uniform 128-byte page size, a minimum 2x write speed and a fast read latency.

The S99GL032N0050 is commonly used in applications such as AC motor controllers, communication base stations, surveillance cameras, sensor nodes and various consumer and industrial products. It is perfectly suited for applications that need efficient, large-capacity data storage, while still consuming low power.

The working principle of the S99GL032N0050 memory is based on the charge storage principle. Electrons are applied to a conductive gate of a field effect transistor, inducing a n-type channel in the semi-conductor material beneath the gate. When a voltage is applied to the control gate, electrons are forced to jump across the gate barrier, generating an inversion layer. This inversion layer is what allows for charge to be stored and maintained in both destructive and non-destructive modes. The memory cell can be programmed to store either a logic ‘1’ or ‘0’ by applying different voltages to the control gate.

When a voltage is applied to the bit line, the control gate opens up and allows the logic ‘0’ or ‘1’ to be read from the cell. The cells can also be set to a write Protect state, where the cells can be locked against any write attempts. This feature is particularly useful for nonvolatile devices, such as the S99GL032N0050, because the write protect state prevents unintentional overwrite of the data stored.

The S99GL032N0050 memory is a highly versatile and useful piece of hardware for a wide range of applications. Its low power consumption, large storage capacity and fast read latency make it an ideal choice for embedded applications. Moreover, its non-volatile storage ensures that data is not lost during power-loss moments.

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