S99GL512P11TFI020

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

S99GL512P11TFI020 is a type of static random access memory (SRAM) chip from the S99GL product family. It is a non-volatile, FRAM-based memory which is offered in a range of densities and speeds.The S99GL512P11TFI020 is based on a 1 transistor-3 storage cell (1T3SC) design with a fast read access time of 0.8 ns and a write cycle time of 2 ns. The chip operates at a maximum operating frequency of 2.5 GHz and supports up to 4 memory banks. It has a maximum density of 512 mb and can support up to 8 words per cycle. It also includes a built-in error correction code (ECC) for increased data integrity.S99GL512P11TFI020 is ideal for applications requiring fast and high-density memory, such as on-chip buffers and caches. It is also suitable for applications that require high-performance data storage, such as embedded systems and network applications. For example, it can be used in a wide range of embedded systems such as medical devices, digital gaming systems, automotive systems, and home entertainment systems.S99GL512P11TFI020 can also be used for data storage in memory-limited applications such as military and aerospace applications. It is particularly suitable for applications related to weapon system applications, due to its high speed and density.In terms of working principle, the S99GL512P11TFI020 operates with a latch circuit typically used in SRAM designs. This type of design uses a four-transistor memory cell, where two transistors are used to store the address and data, and the other two are used to enable the read and write operations.Additionally, when the data address is provided, the two transistors produce a write cycle. This write cycle stores the address and data in the two memory cells. Meanwhile, when the same address is provided again, the two memory cells reproduce the address and data, this time in the read cycle.The S99GL512P11TFI020 is a highly reliable and efficient memory solution that is ideal for various applications requiring fast access and high density. Its low power consumption, high speed, and strong memory integrity make it an ideal choice for various applications such as embedded systems, networks, and weapon system applications.

The specific data is subject to PDF, and the above content is for reference