SACB50 Allicdata Electronics

SACB50 Circuit Protection

Allicdata Part #:

SACB50TR-ND

Manufacturer Part#:

SACB50

Price: $ 0.16
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: TVS DIODE 50V 88V SMB
More Detail: N/A
DataSheet: SACB50 datasheetSACB50 Datasheet/PDF
Quantity: 3000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
3000 +: $ 0.15228
6000 +: $ 0.14178
15000 +: $ 0.14002
Stock 3000Can Ship Immediately
$ 0.16
Specifications
Series: SACB
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 50V
Voltage - Breakdown (Min): 55.5V
Voltage - Clamping (Max) @ Ipp: 88V
Current - Peak Pulse (10/1000µs): 5.8A
Power - Peak Pulse: 500W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Description

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The SACB50 junction field-effect transistors are a unique type of component in the semiconductor industry. They are a type of TVS diode, a surge-protection device that uses a unique combination of insulated-gate bipolar transistors (IGBTs) and field-effect transistors (FETs). SACB50 transistors are an ideal choice for applications that require high-voltage protection, such as automotive electronic systems and power supplies.

The basic working principle of SACB50 junction field-effect transistors is based on the controlled flow of electrons through a semiconductor material. When large voltage surges are encountered, the electrons in the semiconductor material are accelerated and cause an avalanche breakdown. The junction between the lightly doped parts of the semiconductor material, known as the "junction", is then forced into an avalanche breakdown. This creates a low-impedance path for the electrons to flow, which helps to limit the voltage of the surge.

The SACB50 junction field-effect transistor is designed to have a high breakover voltage, allowing it to respond quickly to voltage surges. The breakover voltage is typically between 150 to 500 volts. In addition, the device has a low off-state leakage current, making it suitable for low-power operations and ensuring that the device does not affect system operations.

The SACB50 junction field-effect transistor also has a high on-state voltage, which is the minimum voltage needed to turn the device on. This allows it to have a wide operating voltage range, which makes it suitable for a variety of applications. Furthermore, the device has a low dynamic impedance, meaning that it is capable of fast switching and can handle high-frequency signals.

SACB50 junction field-effect transistors are used in a variety of applications, such as automotive electronic systems, power supplies, computer motherboards, and other consumer electronic devices. They are also used in telecom systems, where they are used to protect against voltage surges in telephone lines and other communication cables. In addition, they are used to protect control cables in industrial and military applications.

The SACB50 junction field-effect transistor is a reliable and effective surge protector, and it is commonly used in a variety of applications due to its low on-state voltage, high breakover voltage, and low dynamic impedance. This makes it an ideal choice for high-voltage surge protection in automotive electronic systems and power supplies.

The specific data is subject to PDF, and the above content is for reference

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