SB040-E3/73 Allicdata Electronics
Allicdata Part #:

SB040-E3/73-ND

Manufacturer Part#:

SB040-E3/73

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 40V 600MA MPG06
More Detail: Diode Schottky 40V 600mA Through Hole MPG06
DataSheet: SB040-E3/73 datasheetSB040-E3/73 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 600mA
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -65°C ~ 125°C
Base Part Number: SB040
Description

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Application Field and Working Principle of SB040-E3/73

SB040-E3/73 diode is a kind of single rectifier diode integrated with both high performance and ultra-low voltage. It is especially suitable for leakage current reduction in high-efficiency low-voltage rectification tasks. It has a maximum operating junction temperature of -55°C to 175°C, and a wide range of rectification voltage from 8 to 40V. It is widely used in power converters, car chargers, battery chargers, DC/DC converters, buck/boost converters, battery chargers and lighting circuits.Working Principle of SB040-E3/73A diode consists of two layers of semiconductor materials connected to two terminals, the anode and the cathode. When a reverse-bias voltage is applied to the diode, the electrons and holes are mostly separated, but some thermally generated electrons and holes may still be able to move around. As minority carriers, they are responsible for the leakage current (Ir). SB040-E3/73’s structure is designed to reduce the tunnel-zone depletion width, increasing the number of electrons and holes in the tunnel-zone and reducing their recombination, therefore reducing the leakage current.The SB040-E3/73 is also designed to maximize its high current forwarding performance. The diode’s structure is composed of heavily doped p and n regions, which have a high concentration of majority carriers. This enables fast forward current transportation and reduces forward voltage drop. Furthermore, the diode is equipped with a self-accelerated recovery process, which allows it to turn off quickly when a reverse bias is applied, making it an excellent choice for high-efficiency applications.ConclusionIn conclusion, the SB040-E3/73 diode is a perfect choice for high-efficiency low-voltage rectification tasks due to its high performance and ultra low voltage characteristics, combined with its ability to minimize the tunnel-zone depletion width, leading to a marked decrease in leakage current. Its high current forwarding performance and accelerated recovery process also allows it to be used in various applications where there is a need for high-efficiency, such as power converters, car chargers, battery chargers, DC/DC converters, buck/boost converters, as well as lighting circuits.

The specific data is subject to PDF, and the above content is for reference

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