SB07-03C-TB-E Discrete Semiconductor Products |
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Allicdata Part #: | SB07-03C-TB-EOSTR-ND |
Manufacturer Part#: |
SB07-03C-TB-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 30V 700MA 3CP |
More Detail: | Diode Schottky 30V 700mA Surface Mount 3-CP |
DataSheet: | SB07-03C-TB-E Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 700mA |
Voltage - Forward (Vf) (Max) @ If: | 550mV @ 700mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 10ns |
Current - Reverse Leakage @ Vr: | 80µA @ 15V |
Capacitance @ Vr, F: | 25pF @ 10V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | 3-CP |
Operating Temperature - Junction: | -55°C ~ 125°C |
Description
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Application field and working principle of SB07-03C-TB-E
The SB07-03C-TB-E, or commonly called the SB070, is a single rectifier diode. It is a small-signal diode with a high current-carrying capacity, low forward voltage drop, and fast switching response. It is widely used in many different applications, such as power rectification, voltage regulation, over-voltage/current protection, switching, and signal processing.Structure
The SB070 is a small-signal silicon rectifier diode with a single junction structure. It is designed with a P+ layer, an N+ layer, and an isolated N+ layer. The P+ layer and N+ layer are the two electrodes of the diode. In order for the diode to work efficiently, the N+ and P+ layers must be connected properly within the diode structure.Working Principle
The working principle of the SB070 is based on the effect of a reverse-biased P-N junction. When there is no voltage applied to the two terminals of the diode, no current will flow through it due to the P-N junction’s blocking effect. However, when the positive terminal is connected to a positive voltage potential, the P-N junction will become forward-biased and a current will begin to flow through the diode. This current is known as the forward current and is typically in the range of 0.5A to 3A.When the positive terminal is connected to a negative voltage potential, the P-N junction will become reverse-biased and the diode will start to block the current flow. This process is referred to as the reverse bias state and no current will flow through the P-N junction under this condition.Applications
The SB07-03C-TB-E is commonly used in various applications such as power rectification, voltage regulation, over-voltage/current protection, switching, and signal processing. In power rectification, it is mainly used to convert AC voltage from power mains into DC voltage, which is then used in various electrical appliances and equipment.In voltage regulation, the SB070 is used to reduce the input voltage to a desired "regulated" voltage level. This is especially useful for powering electronic components that require specific voltage levels.The SB070 is also used in over-voltage/current protection circuits to protect other components from over-voltage/current damage. In switching and signal processing applications, it is used to control the on/off state of a circuit and to process digital signals.Conclusion
The SB07-03C-TB-E is a single rectifier diode widely used in many different applications, such as power rectification, voltage regulation, over-voltage/current protection, switching, and signal processing. This diode is constructed with a P+ layer, an N+ layer, and an isolated N+ layer. Its working principle is based on the effect of a reverse-biased P-N junction. It has a high current-carrying capacity, low forward voltage drop, and fast switching response, which makes it suitable for various purposes.The specific data is subject to PDF, and the above content is for reference
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