SB07-03P-TD-E Allicdata Electronics
Allicdata Part #:

SB07-03P-TD-E-ND

Manufacturer Part#:

SB07-03P-TD-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE SCHOTTKY 30V 700MA PCP
More Detail: Diode Schottky 30V 700mA Surface Mount PCP
DataSheet: SB07-03P-TD-E datasheetSB07-03P-TD-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 700mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 80µA @ 15V
Capacitance @ Vr, F: 26pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP
Operating Temperature - Junction: -55°C ~ 125°C
Description

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Diodes - Rectifiers - Single

The SB07-03P-TD-E diode is a single-phase silicon bridge rectifier, suitable for applications requiring high reverse voltage and low forward voltage drop. This diode is designed to offer full-wave rectification, with a maximum off-state voltage of 600V, a maximum surge voltage capability of 1000V, and a maximum forward current of 7A. This makes it well-suited for a variety of power conversion applications, such as motor control, lighting, and power inverters.

Application Field

The SB07-03P-TD-E diode can be used to produce full-wave rectification for high-voltage, low-current applications, such as motor control and power conversion. These diodes are often used in power inverters, since the high off-state breakdown voltage allows them to handle the high voltages produced by modern inverters. In motor control applications, the high on-state voltage drop allows the diode to regulate the voltage output without wasting energy in the form of heat.

Working Principle

The SB07-03P-TD-E diode is a single-phase silicon bridge rectifier, which utilizes the physical and electrical properties of semiconductor materials to convert AC power into DC power. The diode consists of two p-type and n-type semiconductor layers that are connected in a bridge configuration, forming the bridge rectifier. When the AC input voltage is applied, the electrons in the n-type layer are attracted towards the anode, while the holes in the p-type layer are attracted to the cathode. This creates a current flow in one direction through the diode, which is then rectified and delivered as DC power.

Conclusion

The SB07-03P-TD-E diode is an ideal choice for applications that require high-current, full-wave rectification with low forward voltage drop. The diode is well-suited for power inverters and motor control, due to its high off-state breakdown voltage and low on-state voltage drop. With these attributes, the SB07-03P-TD-E is an effective and reliable rectifier for a variety of electrical and power conversion applications.

The specific data is subject to PDF, and the above content is for reference

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