| Allicdata Part #: | SB120-BDI-ND |
| Manufacturer Part#: |
SB120-B |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | DIODE SCHOTTKY 20V 1A DO41 |
| More Detail: | Diode Schottky 20V 1A Through Hole DO-41 |
| DataSheet: | SB120-B Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 20V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 500mV @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 500µA @ 20V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AL, DO-41, Axial |
| Supplier Device Package: | DO-41 |
| Operating Temperature - Junction: | -65°C ~ 125°C |
Description
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Diodes - Rectifiers - Single
The SB120-B is a silicon power rectifier that is widely used in a variety of consumer electronics due to its ability to turn electricity into direct current (DC). As a unidirectional device, it allows current to flow in one direction through an electric circuit and prevents it from flowing in the opposite direction. The fundamental working principle of the SB120-B power rectifier is based on the electrical properties of a diode.A diode is a halogen crystal comprised of two differently doped semiconductor materials connected together, usually in a cylindrical constructed form. One of the two terminals is known as the anode, while the other is known as the cathode. The purpose of the semiconductor materials is to allow electricity to flow from the anode to the cathode, preventing current from flowing in the opposite direction, which is referred to as ‘reversebiased’ or ‘blocking’. When applying a direct-voltage (DC) voltage across a diode, the electric field created acts against the potential barrier of the p- and n- layers of the semiconductor, allowing current to flow and generating forward bias. This occurs due to an excess of electrons at the n-layer and a shortage of electrons at the p-layer, resulting in an electric current flow. The diode is, in effect, acting as an electrical valve or switch.The SB120-B, being a silicon power rectifier, is designed to use a large enough biasing voltage, from 6V onwards, that it conducts at up to 150 volts. It is usually used in large power supply systems, such as industrial control systems, motor controls and medical instruments.The device also has a wide range of other applications, such as in voltage converters, stabilizers and transformers, solar power systems, and battery chargers. It can be used in automotive systems, as it can withstand high temperatures and harsh conditions. Additionally, it is used as a low-power radio frequency (RF) amplifier, as it can reduce harmonic distortion.A key benefit of the SB120-B is its low forward voltage drop, making it more energy-efficient than other diode rectifiers with higher drops. Another advantage is its low internal capacitance, which helps it to remain fast-reacting at high frequencies when amplifying weak signals.The SB120-B has become one of the most commonly used silicon power rectifiers due to its wide range of applications and benefits. As more practical uses for the device are developed, it is likely to remain a major component of many electronic circuits.The specific data is subject to PDF, and the above content is for reference
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SB120-B Datasheet/PDF