| Allicdata Part #: | SB120E-G-ND |
| Manufacturer Part#: |
SB120E-G |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Comchip Technology |
| Short Description: | DIODE SCHOTTKY 20V 1A DO41 |
| More Detail: | Diode Schottky 20V 1A Through Hole DO-41 |
| DataSheet: |  SB120E-G Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.03175 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 20V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 500mV @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 500µA @ 20V |
| Capacitance @ Vr, F: | 110pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AL, DO-41, Axial |
| Supplier Device Package: | DO-41 |
| Operating Temperature - Junction: | -65°C ~ 125°C |
| Base Part Number: | SB120 |
Description
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The SB120E-G is a high-efficiency schottky power rectifier designed and manufactured to provide optimal performance in a wide range of applications. It has a maximum current of 350 mA and a reverse voltage of 40 V with a solution for maximum power dissipation of 1.6W. It has a very low forward voltage drop for maximum efficiency. The device features fast switching characteristics, high junction temperature and low thermal resistivity.The device is constructed using a thin, metal film with a schottky barrier. The thin film has a wider area than traditional metal film, providing improved thermal characteristics, high junction temperature and low thermal resistivity. The metal film also allows for faster switching characteristics and higher power densities than traditional metal oxide semiconductors. The device is designed to be very efficient in rectifying signals from AC to DC, and can be used for a variety of power management applications including power supply systems and power conditioning.The SB120E-G works by passing an electric current through a schottky diode junction. The diode has a special rectifying property, allowing current to flow in one direction only. This rectifying property is an example of a PN-junction formed between a lightly-doped p-type layer and a heavily-doped n-type layer. The rectifying property of the Schottky diode allows it to convert alternating currents into direct currents, so it can be used in circuits to rectify AC power sources, power supplies, and power conditioning applications.The Schottky diode also has the property of fast recovery. As the junction experiences a reverse bias, it takes less time to discharge the large reverse voltage. This feature is very useful in higher frequency applications, such as DC/DC converters and switching power supplies. The SB120E-G has a fast recovery property that allows it to respond quickly under transient load conditions, making it an ideal choice for power supply applications. In addition to its fast recovery characteristics, the SB120E-G also has thermal stability. This allows for a maximum power dissipation to be reached at a very high junction temperature. With this device, the maximum operating temperature can reach 120°C. This allows for more power to be dissipated and improved performance as the device can be run at a higher current. The SB120E-G is suitable for a variety of applications, including switching power supplies, DC/DC converters, power conditioning, and more. This device is capable of providing superior performance for current applications, and thanks to its fast switching characteristics, thermal stability, and low thermal resistivity, the SB120E-G is the ideal choice for high-efficiency power management applications.
The specific data is subject to PDF, and the above content is for reference
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