SB3100-B

Diodes - Rectifiers - Single

The SB3100-B is a single rectifier diode featuring glass body technology. It is widely used in applications where high-current or steep-slope rectification are required.

Application Field of SB3100-B

The SB3100-B’s compatibility with Schottky barrier technology makes it ideal for switching power regulators, active rectifier circuits, SMPS and high frequency voltage regulators, and for other higher-voltage applications. It is also capable of operating in temperatures up to 125°C, making it suitable for higher-temperature environments such as automotive, industrial, and military applications.

The device is also suitable for both low- and high-frequency voltage surges and overvoltage protection, as well as for link-regulation. Its surge capability makes it ideal for battery charger, solar panels, and solar cell rectification. To minimize EMI noise, its built-in Schottky barrier technology reduces forward voltage drop, which minimizes overall switch power dissipation. Lastly, the SB3100-B features a low reverse current leakage of 10A.

Working Principle

The SB3100-B operates in a similar manner to other single rectifier diodes. It uses a reverse-biased junction to allow only current to flow in one direction, while blocking current in the other direction. It features a forward voltage drop of approximately 0.5 volts, which is considerably lower than that of standard rectifier diodes.

As its name suggests, the SB3100-B uses Schottky barrier technology to reduce the usual forward voltage drop. This is achieved by creating an ultra-thin metal-insulator-semiconductor junction at the diode\'s anode. This junction behaves as a barrier, allowing electrons to tunnel through it and allowing current to pass more easily. This is in contrast to standard diodes, which require a larger forward voltage drop to activate.

In addition, the SB3100-B also features a low reverse current leakage, which is important in applications where current must not flow in the reverse direction. This feature is achieved by having a narrow band gap between the semiconductor and metal junction, which means only electrons with enough energy can cross the junction. This results in low leakage and improved performance.

The SB3100-B is designed to handle high-current requirements, and its high surge capability also makes it suitable for use in higher-voltage applications. In addition, its built-in Schottky barrier technology increases its efficiency by reducing the forward voltage drop, while its low reverse current leakage provides increased protection. As a result, the SB3100-B is an ideal choice for applications that require higher-current rectification or overvoltage protection.