SBAS16DXV6T1G Allicdata Electronics
Allicdata Part #:

SBAS16DXV6T1G-ND

Manufacturer Part#:

SBAS16DXV6T1G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ARRAY GP 100V 200MA SOT563
More Detail: Diode Array 2 Independent Standard 100V 200mA (DC)...
DataSheet: SBAS16DXV6T1G datasheetSBAS16DXV6T1G Datasheet/PDF
Quantity: 1000
4000 +: $ 0.07204
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Description

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The SBAS16DXV6T1G is a diode array designed for a range of applications. This diode array is designed to protect the systems it works with from transient overvoltage and reverse voltage applications. This makes it a good choice for applications like automotive, industrial, and consumer electronics.

The SBAS16DXV6T1G is a 16-channel diode array consisting of two subarrays, each containing 8 diodes and two N-Channel MOSFETs. The subarrays are connected in an OR configuration, providing a high current level protection up to -50V. This diode array has an operating voltage range of -50V to +60V.

The two N-Channel MOSFETs are used to control the current flow from the subarrays. The MOSFETs can be configured to allow for a maximum current of up to 1 amp or to be opened when the voltage on the subarrays exceeds the operating voltage range. The MOSFETs can also be used to shut down the diode array when the voltage on the subarrays drops below the operating voltage range.

The SBAS16DXV6T1G is an ideal choice for automotive applications such as EMI suppression, reverse voltage protection, and motor control. It can also be used in consumer electronics to protect sensitive devices from reverse voltage, overvoltage, and transients. The SBAS16DXV6T1G is also suitable for industrial applications requiring protection from transients, such as power supplies and load sharing.

The working principle of the SBAS16DXV6T1G is based on a diode OR configuration. When the voltage on the subarrays rises above the operating voltage range, the two N-Channel MOSFETs open and allow the current to flow from the subarrays. When the voltage drops below the operating voltage range, the MOSFETs shut down the current flow and protect the system from the overvoltage or reverse voltage. The diode array also has a wide common mode rejection ratio, which helps protect sensitive devices from EMI interference.

Overall, the SBAS16DXV6T1G is a reliable diode array for a range of applications. It is designed to protect sensitive devices from EMI interference and transients and provide reverse voltage protection. It can also be used in automotive, industrial, and consumer electronics to protect against transient overvoltage and reverse voltage applications.

The specific data is subject to PDF, and the above content is for reference

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