Allicdata Part #: | SBAS16DXV6T1G-ND |
Manufacturer Part#: |
SBAS16DXV6T1G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ARRAY GP 100V 200MA SOT563 |
More Detail: | Diode Array 2 Independent Standard 100V 200mA (DC)... |
DataSheet: | SBAS16DXV6T1G Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.07204 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 2 Independent |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io) (per Diode): | 200mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 6ns |
Current - Reverse Leakage @ Vr: | 1µA @ 100V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
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The SBAS16DXV6T1G is a diode array designed for a range of applications. This diode array is designed to protect the systems it works with from transient overvoltage and reverse voltage applications. This makes it a good choice for applications like automotive, industrial, and consumer electronics.
The SBAS16DXV6T1G is a 16-channel diode array consisting of two subarrays, each containing 8 diodes and two N-Channel MOSFETs. The subarrays are connected in an OR configuration, providing a high current level protection up to -50V. This diode array has an operating voltage range of -50V to +60V.
The two N-Channel MOSFETs are used to control the current flow from the subarrays. The MOSFETs can be configured to allow for a maximum current of up to 1 amp or to be opened when the voltage on the subarrays exceeds the operating voltage range. The MOSFETs can also be used to shut down the diode array when the voltage on the subarrays drops below the operating voltage range.
The SBAS16DXV6T1G is an ideal choice for automotive applications such as EMI suppression, reverse voltage protection, and motor control. It can also be used in consumer electronics to protect sensitive devices from reverse voltage, overvoltage, and transients. The SBAS16DXV6T1G is also suitable for industrial applications requiring protection from transients, such as power supplies and load sharing.
The working principle of the SBAS16DXV6T1G is based on a diode OR configuration. When the voltage on the subarrays rises above the operating voltage range, the two N-Channel MOSFETs open and allow the current to flow from the subarrays. When the voltage drops below the operating voltage range, the MOSFETs shut down the current flow and protect the system from the overvoltage or reverse voltage. The diode array also has a wide common mode rejection ratio, which helps protect sensitive devices from EMI interference.
Overall, the SBAS16DXV6T1G is a reliable diode array for a range of applications. It is designed to protect sensitive devices from EMI interference and transients and provide reverse voltage protection. It can also be used in automotive, industrial, and consumer electronics to protect against transient overvoltage and reverse voltage applications.
The specific data is subject to PDF, and the above content is for reference
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