SBAS16LT3G

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	100V
Current - Average Rectified (Io):	200mA (DC)
Voltage - Forward (Vf) (Max) @ If:	1.25V @ 150mA
Speed:	Small Signal =
Reverse Recovery Time (trr):	6ns
Current - Reverse Leakage @ Vr:	1µA @ 100V
Capacitance @ Vr, F:	2pF @ 0V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Operating Temperature - Junction:	-55°C ~ 150°C
Base Part Number:	BAS16

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Introduction

SBAS16LT3G is a low power Schottky barrier rectifier diode suitable for high-speed switching applications, where low leakage current and superior heat stability are key to success. This diode is also suitable for low-voltage electronics applications like battery-powered equipments and telecommunication systems.

Application field

SBAS16LT3G diodes are used in an extensive variety of electronic equipment including communication systems, motor control systems, medical equipment and domestic appliances. This semiconductor diode is mainly used for high frequency switching applications, such as voltage conversion, rectification and signal level control. In addition, it can be used in the fields of monitoring, signal processing and RF (radio frequency) nonlinear processing. The device can be used to make an efficient low-loss power supply or DC-DC converter. Furthermore, this diode is also used in analog circuits and in audio devices as a frequency doubler.

Working principle

The underlying principle of operation behind the SBAS16LT3G diode lies in the movement of electrons due to the presence of an electric field. When an electrical potential is applied across the junction between the anode and the cathode of the diode, a depletion layer is formed. This depletion layer is an area where the number of electrons or holes is very small and is highly insulating. As a result, the electrons in the material are drawn towards the anode causing them to move around the external circuit as current at a much higher rate than that available by conduction through the material itself. The diode\'s switching speed depends on the type of diode and its operating temperature. For instance, the SBAS16LT3G diode is integrated with an epitaxial layer which provides low forward voltage drop with fast switching speed even in changing temperature. Moreover, its small package size and low power dissipation merit make it an ideal element for high-speed switching applications.

Conclusion

Overall, the SBAS16LT3G is a Schottky barrier rectifier diode designed for high-frequency switching power applications such as voltage boosting, rectification and signal level control. The diode is characterized by very low forward voltage drop and low forward leakage current, making it suitable for low-voltage power supplies, motor control systems and RF nonlinear processing. Furthermore, its integrated epitaxial element ensures fast switching speed and heat stability.

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