SBC857BWT1G Allicdata Electronics
Allicdata Part #:

SBC857BWT1GOSTR-ND

Manufacturer Part#:

SBC857BWT1G

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 45V 0.1A SOT-323
More Detail: Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 150m...
DataSheet: SBC857BWT1G datasheetSBC857BWT1G Datasheet/PDF
Quantity: 6000
3000 +: $ 0.04922
6000 +: $ 0.04430
15000 +: $ 0.03938
30000 +: $ 0.03691
75000 +: $ 0.03281
Stock 6000Can Ship Immediately
$ 0.06
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: BC85**W
Description

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The SBC857BWT1G is a single PNP transistor that boasts a wide range of features and a robust design. While the transistor can be used in many different applications, it is most commonly used in amplifiers, switch circuits, and other low-frequency timing circuits that require precise switching control.

The SBC857BWT1G can operate up to a temperature range of 150°C and is characterized by a transistor structure that is optimized for switching speed and low noise operation. It has an extremely high gain of 4750 and low input differential volt age of 0.99V. Additionally, it has a high-current driven capability, up to a maximum of 0.5mA.

The working principle behind the SBC857BWT1G is the same as with other transistors; when a voltage is applied to one side of the base, a small current begins to flow through the device that acts to switch a stronger current on the second side of the base. This voltage source is then further amplified by the gain of the device. The resulting current can then be used to modulate the power it is connected to directly. The switching speed of the device is achieved through its optimized transistor structure and its ability to keep the voltage differential across its low input pins low. This enables extremely fast switching.

The SBC857BWT1G is used in various electronics and computing devices due to its features and reliable operation. Its use in amplifiers makes it ideal for audio and video devices such as receivers and amplifiers, while its switching speed is valuable in applications such as frequency modulation and phase shifting in industrial and automotive electronics. In addition, its low input differential volt age of 0.99V is useful in switching circuits, as it enables precise control over current modulation.}

To summarize, the SBC857BWT1G is a single PNP transistor that is used in a wide range of applications, from amplifiers to switching control. It has an extremely high gain of 4750 and low input differential voltage of 0.99V, and its optimized transistor structure enables high-speed switching. Its use in amplifiers, frequency modulation, and phase shifting make it a valuable component in various electronic and computing devices.

The specific data is subject to PDF, and the above content is for reference

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