SBCP56-16T1G Allicdata Electronics
Allicdata Part #:

SBCP56-16T1GOSTR-ND

Manufacturer Part#:

SBCP56-16T1G

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 80V 1A SOT-223
More Detail: Bipolar (BJT) Transistor NPN 80V 1A 130MHz 1.5W Su...
DataSheet: SBCP56-16T1G datasheetSBCP56-16T1G Datasheet/PDF
Quantity: 1000
1000 +: $ 0.13989
2000 +: $ 0.12755
5000 +: $ 0.11932
10000 +: $ 0.11109
25000 +: $ 0.10972
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 1.5W
Frequency - Transition: 130MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223 (TO-261)
Base Part Number: BCP56
Description

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Transistors are a type of semiconductor device that is commonly used in electronics to amplify or switch electronic signals and electrical power. One type of transistor, the bipolar junction transistor (BJT), is particularly useful for its ability to switch large currents, making it ideal for a range of applications such as power supplies and audio amplifiers. The SBCP56-16T1G is an example of a modern BJT.

SBCP56-16T1G Application Field and Working Principle

The SBCP56-16T1G is an NPN junction transistor that is commonly used in power supply systems, audio amplifiers and other electronic applications. It has an emitter-base junction voltage of 6V, a collector current rating of 16A and is capable of switching large currents quickly and reliably.

The way in which the SBCP56-16T1G works can be broken down into two parts. Firstly, the forward biasing of the emitter-base junction, which takes place when the base becomes more positive than the emitter. This forward biasing allows electrons to enter the base region and produces an increase in the current flowing from the emitter to the collector. This increased current is then used to amplify or switch large currents as required.

The second part of the SBCP56-16T1G is the reverse biasing of the collector-base junction, which occurs when the collector is more positive than the base. This reverse biasing creates a barrier which prevents electrons from entering the collector region, resulting in a decrease in current flow. This decrease in current helps to keep the transistor switched off, allowing greater control over the current flow through the transistor.

These two processes combined make the SBCP56-16T1G ideal for a number of applications where switching or amplification of large currents is required. Common applications for the SBCP56-16T1G include power supply systems, audio amplifiers and other electronic applications where high-current switching is necessary.

Conclusion

The SBCP56-16T1G is a type of NPN junction transistor that is ideal for a range of applications such as power supply systems and audio amplifiers, due to its ability to switch large currents quickly and reliably. This is achieved by the combination of forward and reverse biasing of the two junctions which create an increase and decrease in current respectively, allowing greater control over the current flow through the transistor.

The specific data is subject to PDF, and the above content is for reference

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