SBL3030PT Allicdata Electronics
Allicdata Part #:

SBL3030PT-ND

Manufacturer Part#:

SBL3030PT

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ARRAY SCHOTTKY 30V TO3P
More Detail: Diode Array 1 Pair Common Cathode Schottky 30V 15A...
DataSheet: SBL3030PT datasheetSBL3030PT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 30V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Base Part Number: SBL3030PT
Description

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SBL3030PT Application Field and Working Principle

The SBL3030PT is a diode rectifier array from Infineon Technologies that has a wide range of applications. It is capable of providing superior high-frequency operation with low external components. This rectifier array also provides fast switching and high-speed recovery. It is designed so that it can be used to function in a variety of different applications including general-purpose computing, automotive, industrial automation, telecommunications, and medical products.The SBL3030PT features low forward voltage drop and low reverse leakage current, which make it an efficient device. Additionally, it is designed with tight initial tolerances, which ensures that it is capable of providing superior performance. Furthermore, it is designed with high surge capability to ensure reliable operation. The SBL3030PT is a monolithic device that has a high breakdown voltage rating and is capable of providing improved EMI performance and high surge capability.The SBL3030PT rectifier array is able to provide fast switching, high-speed recovery, and a high-power efficiency. This device is constructed so that it can be used in a variety of applications, and it is capable of providing superior performance. Furthermore, it is designed with low forward voltage drop and low reverse leakage current, which make it an efficient device.The working principle of the SBL3030PT is based on the forward biasing of the PN junction semiconductor diode. The PN junction semiconductor diode consists of two terminals – the anode being the negative terminal and the cathode being the positive terminal. When a current is passed through the anode and the cathode, a forward current will flow through the diode and an electric field will be created. This electric field helps electrons to flow through the diode from the anode to the cathode, reducing the voltage across the diode and consequently the current flowing through it.This forward biasing of the PN junction diode is what makes the SBL3030PT so effective. When a voltage is applied to the anode and the cathode, the forward current will flow through the diode and reduce the voltage across it. This reduces the forward voltage drop and provides a low voltage, low power, and efficient operation. It is this high-efficiency operation that allows the SBL3030PT rectifier to be used in a variety of applications, such as general-purpose computing, automotive, industrial automation, telecommunications, and medical products.The SBL3030PT is designed with high surge capability and high-speed recovery, which make it an ideal choice for applications that require fast switching. Additionally, the device is designed with tight initial tolerances, which helps to ensure reliable operation. The device is constructed with a high breakdown voltage rating and is capable of providing improved EMI performance, which helps to reduce electromagnetic interference. Additionally, the device is designed to withstand high temperatures and is able to function reliably in high temperature environments.In summary, the SBL3030PT is a diode rectifier array from Infineon Technologies that is capable of providing fast switching, high-speed recovery, and a high-power efficiency. It is designed with low forward voltage drop, low reverse leakage current, and tight initial tolerances, which ensure that it is capable of providing superior performance. It is designed with high surge capability and is able to withstand high temperatures. Additionally, it is designed with improved EMI performance, which helps to reduce electromagnetic interference. This rectifier array is an ideal choice for applications that require fast switching and high-speed recovery.

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