SBLB1030-E3/45

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Diodes are commonly used in rectifying, switching and protection applications. Among them, the single rectifier diodes are one of the most widely used diodes in the industry and have been found to be reliable and versatile. In particular, the SBLB1030-E3/45 from ON Semiconductor is a high-reliability ultrafast rectifier diode made of silicon, suitable for use in high-frequency DC and AC applications.

Application Field and Working Principle

The SBLB1030-E3/45 comprises of a silicon chip extended gate structure and an epoxy molded case with a tiny ceramic mount. The unique feature of this diode is its reverse-biased avalanche energy concentration capability, coupled with low reverse-recovery time, making the SBLB1030-E3/45 a suitable choice for power MOSFET and IGBT gate drivers, UPS systems, boost converters, or other applications demanding high switching frequencies.

The SBLB1030-E3/45 operates in surge current up to 200A and in continuous current up to 60A. It is also rated to withstand a voltage up to 600V. The diode is designed with integrated high-voltage surge protection, which helps to keep it from damaging from surges. The reverse-recovery time is 15ns, which makes it suitable for speed-demanding applications.

The SBLB1030-E3/45 operates in two different ways depending on what has been applied to its anode and cathode. It can be used as a rectifier by applying a voltage to its anode relative to its cathode, which will cause current to flow in one direction only. The diode can also be used as a switch since if it is connected in reverse the current flow is blocked and the device is off.

The SBLB1030-E3/45 is an ideal choice for all kinds of high-frequency rectification and protection applications. Thanks to its special characteristics, this diode can ensure that power supply is stable and reliable. Moreover, it is highly durable and efficient, offering minimal heat dissipation and low EMI.

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