SBLB10L30-E3/81 Allicdata Electronics
Allicdata Part #:

SBLB10L30-E3/81-ND

Manufacturer Part#:

SBLB10L30-E3/81

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 30V 10A TO263AB
More Detail: Diode Schottky 30V 10A Surface Mount TO-263AB
DataSheet: SBLB10L30-E3/81 datasheetSBLB10L30-E3/81 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 10A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: SBLB10L30
Description

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Diodes are important electrical components in modern electronics. An important part of any circuit is the rectifier diode, which is used to convert alternating current (AC) to direct current (DC). The Schottky Barrier Rectifier Diode, or SBLB10L30-E3/81, is a type of diode that can be used for a variety of purposes in electronic applications, ranging from high-power systems to circuit protection. This article will discuss the application field of the SBLB10L30-E3/81 and how it works.

The SBLB10L30-E3/81 diode is a dual-Pak device with Schottky barrier rectifier. It is a 500V device with a low forward voltage drop that enables fast switching and higher efficiency in low-power applications. The device features 1A current conduction capability and is capable of delivering high surge currents. This makes it suitable for a variety of applications, including dc-dc converters and switched-mode power supplies.

The SBLB10L30-E3/81 is available in an SOT-323 package, making it an ideal choice for surface-mount applications. It is also RoHS-compliant, making it suitable for use in green applications. Its high surge capability and fast switching speed make it suitable for high-frequency rectification applications.

XLamp SBLB10L30-E3/81 series also features low forward bias voltage, which makes it suitable for forward/reverse blocking, current-limiting and precision-averaging applications. Its low thermal resistance and compact size also make it a good choice for use in high-density applications.

In terms of working principle, the SBLB10L30-E3/81 uses a Metal Oxide Semiconductor (MOS) structure. In this structure, a conducting channel is formed between a source electrode and a drain electrode. This conducting channel is controlled by a voltage applied to a gate electrode. When the gate voltage is applied, electrons from the source electrode are attracted to the drain electrode and the MOS structure acts like a switch, allowing the current to flow in either direction between the source and drain.

The SBLB10L30-E3/81 diode also uses a Schottky Barrier rectifier, which is a variant on the MOS structure. In this case, the current is driven by minority carriers, which are electrons trapped in the depletion region. These electrons are driven across the Schottky Barrier by the thermal energy, allowing the current to flow in only one direction.

The SBLB10L30-E3/81 Schottky Barrier Rectifier Diode is a versatile device with a wide range of uses in electronics. It is an ideal choice for a variety of applications, including dc-dc converters, switched-mode power supplies, forward/reverse blocking, current-limiting, and precision-averaging. Its low forward voltage drop and high surge capability make it suitable for high-frequency rectification applications. Its small size and low thermal resistance make it well-suited to high-density applications. With its MOS and Schottky Barrier rectification, the SBLB10L30-E3/81 is a reliable and efficient device for use in electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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