SBR30150CT Discrete Semiconductor Products |
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Allicdata Part #: | SBR30150CTSMC-ND |
Manufacturer Part#: |
SBR30150CT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | SMC Diode Solutions |
Short Description: | DIODE SCHOTTKY 150V TO220AB |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 150V T... |
DataSheet: | SBR30150CT Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io) (per Diode): | -- |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 15A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 150V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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The SBR30150CT is a specialized rectifier diode array designed to provide improved power management and circuit efficiency. It is a three-terminal device with two independent diodes fabricated on a monolithic substrate. This diode array is designed to provide high current capability, low forward voltage drop, and low reverse leakage current. It is also designed to offer superior switching performance and long operating life.
The SBR30150CT diode array is primarily used in automotive, industrial, and consumer electronic applications. It is well suited for DC-DC converters, power-factor correction, LED lighting, and automotive body lighting systems. It is ideal for applications where thermal dissipation and power dissipation requirements are high. In addition, it is suitable for use in high-current, low-profile applications where space saving and/or thermal management are major considerations.
The SBR30150CT contains two independent diodes connected in series. As a result, each diode has its own forward voltage drop and reverse leakage current. When two SBR30150CT devices are connected in series, a total forward voltage drop of two times the individual forward voltage drop is created while the total reverse leakage current remains the same.
This diode array\'s working principle is based on the PN-junction. A PN-junction is a junction between a p-type semiconductor and an n-type semiconductor. This junction creates a depletion region that is capable of conducting electric current, allowing for charge carriers to flow across the junction. When a forward biasing voltage is applied to the diodes, the two diodes within the array become active and current flows through them.
The SBR30150CT offers excellent electrical characteristics like low forward voltage drop, high current capability, low reverse leakage current, and fast switching. The PN-junction of the diode allows it to operate effectively in rectifier mode, making it suitable for applications that require efficient power management and high performance.
The SBR30150CT is an ideal choice for applications that require high current capability, low forward voltage drop, low reverse leakage current, and fast switching. This diode array is widely used in automotive and industrial applications, making it an extremely popular choice amongst engineers and designers who are looking to incorporate efficient and reliable power management into their designs.
The specific data is subject to PDF, and the above content is for reference
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