SBR40U100CTE

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The SBR40U100CTE is a diode rectifier array comprising four individual Schottky barrier rectifiers integrated into a single package. The device has an avalanche energy rating of 40uJ and a maximum peak forward surge current of 160Amps. The maximum repetitive reverse voltage is 100V and the SBR40U100CTE has an operating temperature range of - 65 °C to +175 °C.

The SBR40U100CTE is widely used in power switching, load switching, HID lighting, automotive and automotive electronics as well as other general electronic applications. The SBR40U100CTE is suitable for most applications where low forward voltage is required, as well as low power loss in high current applications such as power switching. The SBR40U100CTE’s rectifier array allows up to 160-Amps of continuous current, making it an ideal diode rectifier for a large variety of applications.

The SBR40U100CTE can be configured in a number of ways depending on the application requirements. In a low forward voltage configuration, the SBR40U100CTE can be used as a series or parallel connection of the four rectifiers in the device to maximize current efficiency. In a protection configuration, the SBR40U100CTE can be used as a rectifier to protect electronic components from overvoltage or reverse current by clamping and dissipating the excess voltage or current. In this configuration, the SBR40U100CTE can be used as a self-resetting circuit breaker providing over-temperature protection and fusing of power components and semiconductors. The SBR40U100CTE can also be used in low impedance switching applications where the low forward voltage drop allows the device to switch faster than other rectifier arrays.

The working principle of the SBR40U100CTE is based on the Schottky barrier rectifier. The Schottky rectifier is a three-terminal device that uses the same concept of forward and reverse operation as the more commonly used silicon rectifier diodes. The fundamental operation of a Schottky rectifier has two conduction states, the forward biased, and the reverse biased. In the forward bias, the contact between the semiconductor and the metal-metal barrier of the rectifier create a lower energy barrier allowing electron current to flow from the anode to the cathode.

In reverse bias, the contact between the semiconductor and the metal-metal barrier has a higher energy barrier that is not conducive to current flow. The Schottky barrier rectifier offers several advantages over typical semiconductor rectifier diodes, such as a much lower forward voltage drop, significantly lower capacitance, and better switching speed. The low forward voltage drop allows the SBR40U100CTE to switch faster than other rectifier arrays, while the lower capacitance reduces power loss in high current applications. The SBR40U100CTE is ideal for use in a variety of power switching, load switching, HID lighting, automotive, and automotive electronics applications.

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