SBR4U130LP-7 Allicdata Electronics
Allicdata Part #:

SBR4U130LP-7DITR-ND

Manufacturer Part#:

SBR4U130LP-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE SBR 130V 4A 8DFN
More Detail: Diode Super Barrier 130V 4A Surface Mount U-DFN303...
DataSheet: SBR4U130LP-7 datasheetSBR4U130LP-7 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: SBR®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 130V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 4A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 130V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 150°C
Description

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The SBR4U130LP-7 diode is a single subminiature rectifier that is classified under Diodes - Rectifiers - Single. This diode is made by SMAKN and mainly used for power management applications and power supplies. It is available in surface mount packages with voltage ratings ranging from 4V to 130V, current ratings from 0.2 A to 0.5 A, and average forward current ratings from 0.3 A – 2 A.This diode is a high-efficiency and fast recovery device that has a low forward voltage drop across it. It is also suited for high-temperature operation and can withstand extreme variations in temperature and humidity. The body of the diode is made of specialized materials and is designed to be extremely reliable, having a low failure rate even under extreme conditions.The SBR4U130LP-7 is a unidirectional silicon rectifier, meaning that it only allows current to flow in one direction. This means the device acts as a switch, allowing current to pass through it when a positive voltage is applied and blocking current from passing when there is no applied voltage or when it is of opposite polarity.The device’s working principle is based on the p-n junction formed between the two semiconductor materials with which it is composed. Whenever a forward bias is applied, a depletion zone is formed and a reverse bias is produced, thus allowing current to pass. When no voltage is applied, the depletion zone is eliminated and reverse bias is produced, blocking current from passing.The SBR4U130LP-7 is used in a variety of applications, but its most common uses include power management, power supplies, low-voltage converters, voltage regulators, inverters, and rectifier bridges. The device is also ideal for use in automotive electronics and other high-temperature applications.This diode is a valuable component in many different types of circuits due to its high-efficiency and reliability. Furthermore, its compact size and low cost make it an excellent choice for many different types of projects and applications.

The specific data is subject to PDF, and the above content is for reference

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