SBRB1545CTT4G Allicdata Electronics

SBRB1545CTT4G Discrete Semiconductor Products

Allicdata Part #:

SBRB1545CTT4GOSTR-ND

Manufacturer Part#:

SBRB1545CTT4G

Price: $ 0.64
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ARRAY SCHOTTKY 45V D2PAK
More Detail: Diode Array 1 Pair Common Cathode Schottky 45V 7.5...
DataSheet: SBRB1545CTT4G datasheetSBRB1545CTT4G Datasheet/PDF
Quantity: 800
800 +: $ 0.58067
1600 +: $ 0.45842
2400 +: $ 0.42786
5600 +: $ 0.40748
Stock 800Can Ship Immediately
$ 0.64
Specifications
Series: SWITCHMODE™
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 7.5A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 45V
Operating Temperature - Junction: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK-3
Base Part Number: MBRB1545CT
Description

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The SBRB1545CTT4G is a diode array used mainly in inverter circuits and motor drives. The array can be configured to provide either a one-way or two-way current flow in its controlling application. Generally, this device is used as a bi-directional power switch or key switch. As a bi-directional power switch, the SBRB1545CTT4G provides overvoltage protection for the control circuit, so it has been widely used in motor drives. Additionally, it is widely used as an EMI filter due to its superior high-frequency suppression ability and noise isolation characteristics.

The SBRB1545CTT4G is a four-terminal diode array. Each diode consists of a metal oxide semiconductor (MOS) and a p-type substrate connected in a PN-junction. The MOS is typically formed by an oxide layer of silicon. To form a diode, the substrate and the oxide layer are connected to a metal source and metal gate terminal, which in turn are connected to the substrate and oxide layer, respectively.

When current is applied to the source and gate terminals, the MOS is switched on, and electrons flow from the source terminal to the gate terminal. This forms the diode in a PN junction. The current flow can be reversed by changing the voltage at either the source or gate terminal. This change in voltage will cause the current path to switch, thereby allowing for bi-directional current flow through the diode array.

The SBRB1545CTT4G, when used in an inverter circuit, is designed to provide a low-resistance state between the source and drain terminals. This helps to increase the efficiency of the motor operation by reducing the amount of energy that is converted into heat. Additionally, the diode array can also be used as an EMI filter as it can help to absorb high-frequency noise and isolate the motor from any potential interference.

In summary, the SBRB1545CTT4G is a rectifier diode array which is mainly used in inverter circuits and motor drives. It is a four-terminal device which can provide a one-way or two-way current flow in its controlling application. It has superior high-frequency suppression ability and noise isolation characteristics and can be used as an EMI filter. In addition, it can help to reduce energy losses during motor operation by providing a low-resistance path between the source and drain terminals.

The specific data is subject to PDF, and the above content is for reference

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