Allicdata Part #: | SBRB81545CTT4G-ND |
Manufacturer Part#: |
SBRB81545CTT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ARRAY SCHOTTKY 45VD2PAK |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 45V 7.5... |
DataSheet: | SBRB81545CTT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SWITCHMODE™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 45V |
Current - Average Rectified (Io) (per Diode): | 7.5A |
Voltage - Forward (Vf) (Max) @ If: | 840mV @ 15A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 45V |
Operating Temperature - Junction: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK-3 |
Base Part Number: | MBRB1545CT |
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Diodes - Rectifiers - Arrays
The SBRB81545CTT4G diode rectifier array is a powerful device that is used in a wide range of applications. This article will discuss its use applications and the principles under which it works.
Applications
The SBRB81545CTT4G diode rectifier array can be used in a variety of applications. It is useful in high-frequency rectifier circuits, high-voltage switching circuits, high-reliability DC-DC converters and various automotive applications. In addition, it can also be used in power supplies, solar cell protection circuits as well as memory protection circuits.
The SBRB81545CTT4G is highly suitable for interfering with electromagnetic interference (EMI) due to its multiple reverse diodes that are distributed between anodes and cathodes. This allows it to reduce the input current against harmonic distortion, making it an ideal choice for high-impedance circuits.
In addition, the reverse voltage of the SBRB81545CTT4G is guaranteed up to 600V, which provides sufficient protection for most applications. This wide reverse breakdown voltage also permits applications in high-voltage switching circuits and allows for a broad operating temperature range (between -55°C up to 150°C).
Working Principle
The SBRB81545CTT4G diodes rectifier array is designed to deliver a high current capacity with minimal power loss over a wide range of output current levels. It consists of sixteen high-performance PN rectifier diodes and provides enhanced self-commutating behavior that can be used in high-frequency switching applications.
The device is designed to be reverse-biased and has two main terminals, one of which is an anode and the other a cathode. When a voltage applied across the two terminals, the diode rectifier array ensures that current only flows in one direction (from anode to cathode). The benefits of this include enhanced efficiency, preventing short circuits and suppression of electro-magnetic interference (EMI).
As with any rectifier, the SBRB81545CTT4G diodes rectifier array also works according to the principle of peak inverse voltage (PIV). This means that when a reverse voltage is applied to the device, the rectifier will stop conducting current and the diode will not be affected. This is an important feature for protecting sensitive components in a circuit.
The SBRB81545CTT4G rectifier array also offers low power consumption and low switching times, making it ideal for use in high-performance, low-noise applications. For example, the device works well in automotive interfaces, where fast switching speeds are required without compromising performance.
Conclusion
The SBRB81545CTT4G diode rectifier array is a versatile and powerful device with a range of applications and uses. Its wide range of benefits makes it an ideal choice for use in rectification circuits, switching circuits, automotive interfaces and more. Its low power consumption and high reverse voltage make it suitable for high-voltage applications and its distribution of reverse diodes allows it to reduce input current against harmonic distortion. Finally, its peak inverse voltage (PIV) mechanism ensures that the device will not be damaged when reverse voltage is applied to it.
The specific data is subject to PDF, and the above content is for reference
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