SBRD8360G-VF01 Allicdata Electronics
Allicdata Part #:

SBRD8360G-VF01-ND

Manufacturer Part#:

SBRD8360G-VF01

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE SCHOTTKY 60V 3A DPAK
More Detail: Diode Schottky 60V 3A Surface Mount DPAK
DataSheet: SBRD8360G-VF01 datasheetSBRD8360G-VF01 Datasheet/PDF
Quantity: 1000
675 +: $ 0.32836
Stock 1000Can Ship Immediately
$ 0.36
Specifications
Series: SWITCHMODE™
Packaging: Tube 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 60V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: MBRD360
Description

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A diode is a solid-state device that enables current to flow in one direction, while blocking current in the opposite direction. The SBRD8360G-VF01 is a high-power Schottky rectifier diode designed for a wide range of applications. It is encapsulated in a surface-mountable package with a lead-free finish, making it suitable for automotive and other surface mount applications. This article will discuss the application field and working principle of the SBRD8360G-VF01.

Application Field and Features

The SBRD8360G-VF01 is designed to be used in high-power applications. It is ideal for use in automotive, telecommunication, industrial, and consumer electronics applications. The device is capable of withstanding high surge currents, has a low forward voltage drop, and can dissipate up to 8A of average forward current. The device has a voltage rating of up to 30V and can handle up to 200V peak reverse voltage. The device also features low leakage current and has a temperature range of -55°C to 125°C.

Working Principle

The SBRD8360G-VF01 is composed of two oppositely doped layers of semiconductor material. The lightly doped n-type material is connected to the anode, while the heavily doped p-type material is connected to the cathode. When a voltage is applied across the diode, the n-type material releases electrons, which move towards the p-type material and form a forward-bias current. The electrons travel through the diode until they reach the p-type material, where they are then recombined with the holes in the material. This creates a flow of current in a single direction and prevents any current from flowing in the opposite direction.

As the voltage across the diode increases, the current flows through the diode also increases. This is referred to as forward-bias voltage and is what makes the diode conduct. When the voltage is reversed, the current flow is blocked and the diode is said to be reverse-biased. The SBRD8360G-VF01 is designed to handle high-voltage, high-current applications, allowing it to withstand large surges in current and voltage.

Conclusion

The SBRD8360G-VF01 is a high-power Schottky rectifier diode designed for a wide range of applications. It features a low forward voltage drop, can withstand meaningful surge currents, and works over a broad temperature range. The device is suitable for automotive and other surface mount applications, and has a voltage rating of up to 30V and can handle up to 200V peak reverse voltage. The device works on the principle of two oppositely doped layers that enable the device to conduct in one direction only, while blocking in the opposite direction.

The specific data is subject to PDF, and the above content is for reference

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