SBT150-04Y-DL-E Allicdata Electronics
Allicdata Part #:

SBT150-04Y-DL-E-ND

Manufacturer Part#:

SBT150-04Y-DL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ARRAY SCHOTTKY 40V SMPFD
More Detail: Diode Array 1 Pair Common Cathode Schottky 40V 15A...
DataSheet: SBT150-04Y-DL-E datasheetSBT150-04Y-DL-E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: SMP-FD
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 6A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes are important electrical components that are used in various circuit architectures to control the direction of electricity. Rectification is the process of changing alternating current (AC) into direct current (DC) and is typically accomplished using diodes or rectifier circuits. Arrays of diodes are also used to build higher current rectifier or diode bridges. This article will focus on the application of the SBT150-04Y-DL-E diode array, including an overview of its working principle.

The SBT150-04Y-DL-E diode array is a high-performance rectifier bridge ideal for use in a variety of applications, including industrial equipment, medical electronics, and consumer electronic devices. The device is a double-diode bridge based on the Schottky barrier principle. It consists of four diffusion-doped diodes arranged in two parallel rows, providing the desired current rectification effect. Each diode has a forward voltage of 150V, a breakdown voltage of 400V, and a low-current conduction of 0.6mA. The device has a total package size of 5.9mm x 4.5mm, making it well suited for a variety of space-constrained applications.

The working principle of the SBT150-04Y-DL-E diode array is based on its ability to absorb the positive and negative half-waves of an AC signal and selectively pass one half-wave to the load. When input voltage is applied across the bridge, the two diodes in each row conduct at different times for each half-cycle. During the positive half-cycle of the alternating wave, D1 and D4 conduct, allowing current to flow from the anode of D1 to the cathode of D4 and through the load. In the negative half-cycle, D2 and D3 conduct, allowing current to flow from the anode of D2 to the cathode of D3 and through the load in the opposite direction. This type of rectification provides a full-wave form of current across the load.

The SBT150-04Y-DL-E diode array is designed to handle high power inputs, typically up to 500 watts, with an acceptable efficiency of up to 98%. Its high thermal performance and mechanical robustness makes it capable of operating effectively in a wide range of temperatures, while its low forward voltage drop makes it suitable for low-noise and high-speed applications. Additionally, the device is rated for long-term operation with a high reliability rating, which makes it a suitable choice for a variety of high-reliability rectifier devices.

In summary, the SBT150-04Y-DL-E diode array is a high-performance rectifier bridge suitable for a variety of applications. Its Schottky barrier-based double-diode bridge architecture, combined with its small physical size and high reliability, makes it an ideal device for a variety of applications, including industrial equipment, medical electronics, and consumer devices. By leveraging the rectification and full-wave form capabilities of the device, it is possible to achieve laboratory-grade AC to DC power conversion with minimal distortion and noise.

The specific data is subject to PDF, and the above content is for reference

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