SBT80-10J Allicdata Electronics
Allicdata Part #:

SBT80-10J-ND

Manufacturer Part#:

SBT80-10J

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ARRAY SCHOTTKY 100V TO220
More Detail: Diode Array 1 Pair Common Cathode Schottky 100V 8A...
DataSheet: SBT80-10J datasheetSBT80-10J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 8A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220ML
Base Part Number: SBT80-10
Description

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SBT80-10J diodes have many applications in the field of rectification and arrays. These devices have schottky barrier rectifiers, which use a p-n junction to produce a rectified voltage, instead of a junction diode. They are capable of handling higher burn-in current within the same auxiliary current rating in comparison to PN diodes. SBT80-10J diodes are particularly useful in the application of high power rectification and arraying.

A prototypical array of SBT80-10J diodes looks like a series of three diodes connected in parallel and interconnected by two additional elements — one ahead of the diodes and another after the diodes. This configuration is often referred to as a "Schottky-Tarr-Johansen" array. The forward voltage drop of the device, combined with the series resistances of the elements, serves to limit the forward current through the array, effectively using both the voltage and the current as current limiting elements. By controlling the forward voltage drop, a wide range of currents can be effectively controlled in the range of 0 - 50 mA.

The working principle of an SBT80-10J diode is based on the Schottky barrier rectifier concept. In this device, the PN junction is replaced by a “Schottky” barrier formed by the combination of a highly doped semiconductor material and an adjacent metal layer. As the voltage across the device increases, the Schottky barrier carries current more and more efficiently, producing a rectifying junction. This feature makes the SBT80-10J diode ideal for use in high power applications, where the controlled current and voltage levels are necessary for effective rectification and arraying.

Aside from the Schottky-Tarr-Johansen array, another common application of SBT80-10J diodes is in the area of power management. This can be achieved by connecting a number of the device’s together in a “bridge output” configuration. This somewhat complex arrangement allows for both voltage and current regulation in order to effectively manage the power.

SBT80-10J diodes are also commonly used for UPS systems, due to their high current capability and temperature stability. The device can be configured to maintain a constant output current and output voltage, even when the power source fails. This makes the SBT80-10J diode a critical component in emergency power applications.

In conclusion, the SBT80-10J diode is a highly versatile device. Its ability to stand up to high current and temperatures makes it an ideal choice for high power rectification and arraying. Additionally, its unique Schottky-Tarr-Johansen Array configuration, as well as its use in power management and emergency power applications, makes the device an invaluable device for those in the field of rectifiers and arrays.

The specific data is subject to PDF, and the above content is for reference

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