Allicdata Part #: | SBT80-10JS-ND |
Manufacturer Part#: |
SBT80-10JS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ARRAY SCHOTTKY 100V TO220 |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 100V 8A... |
DataSheet: | SBT80-10JS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io) (per Diode): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 800mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 50V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220ML |
Base Part Number: | SBT80-10 |
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Diodes are one of the most important components in any electrical engineering application. They are used to control and regulate the flow of current through a circuit. Rectifiers, on the other hand, are used to convert alternating current (AC) to direct current (DC). Arrays, which are an arrangement of two or more diodes or rectifiers, can be used to provide further control and management of current flow in a circuit.
The SBT80-10JS is a rectifier array developed by Shanghai Bao Ting Technology Co., Ltd. It is a low-voltage and -power three-phase bridge rectifier, providing a rectified and filtered voltage which can be used as an input supply for DC/DC converters, DC/AC inverters, and many other electronic circuits.
The SBT80-10JS is designed with an efficient Schottky barrier rectifier process, and it has low forward voltage drop, low reverse leakage current, and low thermal resistance. Its features include an over-temperature protection, over-voltage protection, over-current protection, and surge-protection for currents up to 10A. It is suitable for use in various applications that require high safety and reliability, such as UPS inverters, battery charge control systems, switching power supplies, telecom systems, computers, and other similar applications.
The working principle of the SBT80-10JS is based around the PN junction of two semiconductors. When the PN junction of two semiconductors is subjected to a voltage, the electrons on one side will be drawn to the other side, forming a low resistance path for current to flow. This is known as the forward-bias state. When the voltage is reversed, the flow of current is blocked and the junction can be said to be in the reverse-bias state.
The SBT80-10JS takes advantage of this principle, utilizing a high-speed rectification process and a built-in ESD protection circuit. The built-in ESD protection circuit helps to protect the device against electrostatic discharge, even in areas with high ESD levels. Additionally, the high-speed rectification process helps to reduce voltage ripples and improve the stability of power supply, making the SBT80-10JS an ideal choice for applications where power stability is paramount.
In conclusion, the SBT80-10JS rectifier array is an efficient and reliable component for various electrical engineering applications. It is designed to provide a reliable power source and minimize the effects of electrostatic discharge. Moreover, its high-speed rectification process ensures power stability and reduces voltage ripples.
The specific data is subject to PDF, and the above content is for reference
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