SDZT15R5.1 Discrete Semiconductor Products |
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Allicdata Part #: | SDZT15R5.1TR-ND |
Manufacturer Part#: |
SDZT15R5.1 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 100MW 5.1V 0603 |
More Detail: | Zener Diode 5.1V 100mW ±5% Surface Mount SMD0603 |
DataSheet: | SDZT15R5.1 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.02286 |
30000 +: | $ 0.02151 |
75000 +: | $ 0.02017 |
105000 +: | $ 0.01748 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.1V |
Tolerance: | ±5% |
Power - Max: | 100mW |
Current - Reverse Leakage @ Vr: | 2µA @ 1.5V |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Package / Case: | 0201 (0603 Metric) |
Supplier Device Package: | SMD0603 |
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The SDZT15R5.1 belongs to the diodes-Zener-single family and is particularly beneficial for instrumentation and telecommunication equipments. It is constructed from an NPN quartz substrate and possesses a low noise feature which is well suited for sensitive operations. The SDZT15R5.1 also has a low current consumption for increased efficiency, a shielding capacitor for increased stability, and a built-in PTC for transient suppression. This device is designed for low voltage operation, commonly for between 5.4V and 15V.
The application field of the device is wide and varied, from the mission-critical voltage regulation used in avionic and automotive electronics to the zero-cross detection and semiconductor protection utilized in industrial power supplies. Other applications include surge protection, clamping, voltage inverters, battery stand-by, and AC surge/ power line voltage protection. By adding a resistor element, the SDZT15R5.1 can also function as a temperature controlled switch.
The SDZT15R5.1 encompasses two primary working principles. Firstly, when reversed biased an avalanche breakdown will occur and produce a voltage drop according to its breakdown voltage. Secondly, when forward biased the breakdown region of the diode emits a current which can be regulated by the controlling biasing voltage.
Electrons approaching the junction are accelerated until the electrostatic repulsion drives them back. The electric field produced from the electrons is large enough to further accelerate the electrons, until a breakdown occurs. This avalanche breakdown produces a large amount of electron-hole pairs, resulting in a multiplicative effect and a decrease in resistance and the Zener voltage. For forward biasing, current can flow from the anode to the cathode, however a slightly higher reverse voltage is necessary for current to be extracted from the cathode.
The SDZT15R5.1 has an insulation rating of 6000V RMS per UL1414 with a leakage current of 0.01mA maximum. This device has a power dissipation capability of 5W and an operating junction temperature of -55°C to +125°C. Utilizing this device is convenient and effective, allowing for rapid and trouble free implementations into existing systems. It is constructed to high precision standards, surrounded by a black moulded package, and is well suited for both commercial and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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