SDZT15R7.5 Discrete Semiconductor Products

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SDZT15R7.5 Application Field and Working Principle

As part of the diode – zener – single category, SDZT15R7.5 offers suitable solutions for a variety of industrial applications. As this diode boasts an impressive nominal operating junction temperature at 150° C, it has become a clear choice for large-scale thermoelectric applications.

Overview

SDZT15R7.5 is a commercial-grade, N-type silicon epitaxial semiconductor, which is specifically tailored for a parallel rectifying circuit. The diode features a fully molded package type, a size of 103 mm2 and a schematic symbol of Zener diode. The other main features of this diode are a maximum allowable current value of 15A, and a peak forward surge current value of 25A.

Main Specifications

• Nominal operating junction temperature: 150° C
• Zero power reverse voltage: 7.5V
• Maximum reverse current rating at 25° C: 25 μA
• Maximum forward voltage drop at 25° C: 0.718V
• Maximum allowable reverse current rating at 25° C: 15A
• Maximum peak forward surge current: 25A
• Operating temperature range: -65° C to +150° C
• Package type: fully molded
• Dimension: 103 mm2
• Schematic Symbol: Zener Diode

Overview of the Working Principle

SDZT15R7.5 diodes have a unique working principle. When the voltage applied to the P side of the diode is lower than the voltage applied to theN side of the diode, the diode will conduct current in the forward direction. The forward current flow will be limited in magnitude by the Zener voltage of the diode. When the voltage applied to the P side of the diode is higher than the voltage applied to the N side of the diode, the diode will conduct current in the reverse direction. The reverse current flow will be limited in magnitude by the reverse current rating of the diode.

Application Field

Due to its high thermal efficiency, coupled with the fact that it has a zero power reverse voltage of 7.5 V, SDZT15R7.5 diodes are suitable for high-voltage systems, such as solar panels and wind turbines. Furthermore, the diode operates in a wide range of temperatures, from -65° C to 150° C, making it suitable for high-temperature applications. In addition, the diode has a good power ratings, which make it suitable for large-scale industrial applications. Finally, the package type of this diode, which is fully molded, facilitates easy handling, mounting and installation.

Conclusion

In summary, SDZT15R7.5 is a N-type silicon epitaxial diode, specifically tailored for a parallel rectifying circuit. It features an impressive nominal operating junction temperature of 150° C, and has a zero power reverse voltage of 7.5V. Its main features include maximum allowable current value of 15A and peak forward surge current of 25A.The diode’s working principle involves limited current flow when the voltage applied is lower or higher than the voltage applied to the N side of the diode. Its application is mainly in high-voltage systems, such as solar panels and wind turbines, and it has a good power rating and is suitable for high-temperature applications. Finally, the package type of this diode is fully molded and facilitates easy handling, mounting and installation.

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