SE12DBHM3/I Discrete Semiconductor Products |
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| Allicdata Part #: | SE12DBHM3/IGITR-ND |
| Manufacturer Part#: |
SE12DBHM3/I |
| Price: | $ 0.28 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 100V 3.2A TO263AC |
| More Detail: | Diode Standard 100V 3.2A Surface Mount TO-263AC (S... |
| DataSheet: |  SE12DBHM3/I Datasheet/PDF |
| Quantity: | 2000 |
| 2000 +: | $ 0.25468 |
| 6000 +: | $ 0.24255 |
Specifications
| Series: | Automotive, AEC-Q101, eSMP® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 3.2A |
| Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 12A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 3µs |
| Current - Reverse Leakage @ Vr: | 20µA @ 100V |
| Capacitance @ Vr, F: | 90pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab) Variant |
| Supplier Device Package: | TO-263AC (SMPD) |
| Operating Temperature - Junction: | -55°C ~ 175°C |
Description
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The SE12DBHM3/I rectifier is a single, ultrafast, power diode product designed to be used in high energy efficiency applications such as mobile phones, automotive and industrial power applications. With its ultrafast recovery time and low forward voltage drop, it offers high preferentially advantages to switching power supplies.The SE12DBHM3/I diode is a low-loss, high-ripple current, and ultrafast rectifier optimized for extremely high-efficiency switch-mode power supplies. The SE12DBHM3/I is able to recover its charge quickly from peak to valley without the need for an additional recovery circuit. This makes it ideal for applications requiring high-efficiency and fast response.The SE12DBHM3/I rectifier is built using advanced Schottky Barrier Diode (SBD) technology integrated with advanced high-frequency switching circuitry. This makes the SE12DBHM3/I rectifier highly efficient in handling switch-mode power supply applications.The SE12DBHM3/I rectifier is designed to switch rapidly and have a low forward voltage drop. It performs ultrafast current conduction and charge recovery, thus improving the efficiency of power supply devices. The diode also has very low Reverse Recovery Time (RRT), which is a key factor in predicting power loss and improving power supply performance.The working principle of the SE12DBHM3/I rectifier is that when it is forward biased, the electrons in the n-type region are attracted to the p-type area and current begins to flow. Once the bias voltage exceeds the breakdown voltage of the SBD, the avalanche current rapidly increases. The current is then controlled by applying voltage to the SCR gate. The current then flows until the diode is automatically turned off, which is known as commutation.To sum up, the SE12DBHM3/I rectifier offers high switching frequency and efficiency with low forward voltage drop and reverse recovery time. It is an ideal solution for high-efficiency applications such as in automotive and industrial systems. Moreover, its very low reverse recovery time makes it an ideal choice for high frequency and low-loss switch-mode power supplies.
The specific data is subject to PDF, and the above content is for reference
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