SE20PBHM3/85A

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Application Field and Working Principle of SE20PBHM3/85A

SE20PBHM3/85A is a type of single rectifier diode from a series of SE20PBHM3/85A products, which is designed for applications in a wide range of fields, including automotive, telecoms, industrial, and consumer electronics industries. This diode is known for its fast-recovery properties and low-loss characteristics.

Features of SE20PBHM3/85A

The features of SE20PBHM3/85A single rectifier diode, includes:

• Lower forward voltage and improved forward-current rating
• High-efficiency rectification performance
• Low static total capacitance and reverse leakage
• High stability and reliability
• Tight mechanical specifications for easy mounting and thermal management

Applications of SE20PBHM3/85A

SE20PBHM3/85A single rectifier diode is a general-purpose device which is suitable for use in telecommunications, automotive, industrial and consumer electronics. Reasons for its preferred use include:

• high current handling capacity at low voltages;
• low forward-voltage drop and improved temperature coefficients;
• reverse voltage protection;
• low capacitance and leakage current;
• tight mechanical specification;
• high reliability and stability.

The SE20PBHM3/85A diode exhibits superior switching speed and extremely low forward voltage drop, allowing it to be used in a wide range of application circuits, including power supplies, DC-DC converters, AC/DC converters, overvoltage protection circuits, and free-wheeling diodes. It is also suitable for use in automotive and industrial applications.

Working Principle of SE20PBHM3/85A Single Rectifier Diode

The SE20PBHM3/85A single rectifier diode is a semiconductor device that operates by using a junction, or an electrical connection, between two types of material, generally, an n-type and p-type. In the case of SE20PBHM3/85A diode, the n-type material is the anode and the p-type material is the cathode.

These two types of material have different properties, the n-type material has more free electrons than the p-type material. When a voltage is applied to the diode, the p-type material attracts the free electrons of the n-type material and creates a doping region at the junction. This doping region acts as a forward bias, which allows current to flow.

However, if the applied voltage is reversed in polarity, the p-type material is no longer attractive, and the doping region is dissipated. This creates a reverse bias and prevents current from flowing through the diode. This property allows the diode to act as a rectifier, which filters AC signals and converts them into DC signals.

Conclusion

SE20PBHM3/85A is a single rectifier diode that is suitable for a variety of applications, thanks to its fast-recovery properties, low-loss characteristics, and tight mechanical specifications. The main working principle of the device is based on the principle of junction between p-type and n-type materials and the forward and reverse biases that are generated when a voltage is applied.

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