SE20AFB-M3/6B Allicdata Electronics
Allicdata Part #:

SE20AFB-M3/6B-ND

Manufacturer Part#:

SE20AFB-M3/6B

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 100V 1.3A DO221AC
More Detail: Diode Standard 100V 1.3A (DC) Surface Mount DO-221...
DataSheet: SE20AFB-M3/6B datasheetSE20AFB-M3/6B Datasheet/PDF
Quantity: 1000
14000 +: $ 0.06148
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Description

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SE20AFB-M3/6B Introduction

SE20AFB-M3/6B is a single rectifier diode, which is commonly used in different types of electrical and electronic applications. This type of diode can be used in different types of application fields, such as power conditioning, motor control, and communication systems. This device has a blocking voltage of 20A with a forward voltage drop of 2V.

Application Field

SE20AFB-M3/6B rectifier diode is a device that is mostly used in power conditioning, motor control, and communication systems. Its blocking voltage of 20A makes it suitable for use in high-voltage applications and its low forward voltage drop of 2V enables it to be used in low-voltage applications. It can be used for various power conversion and drive applications, such as DC-DC converters, DC-AC inverters, rectifiers, and motor drives. It also finds application in wireless power transmission and communication systems.

Working Principle

The SE20AFB-M3/6B rectifier diode is a p-n junction device that operates on the principle of recombination and diffusion of minority and majority carriers. When a sufficient forward bias is applied across the p-n junction, the depletion region between the p-n junction becomes thin and the electron’s and hole’s mobility increases, thus allowing the majority carriers to easily cross the junction region. The minority carrier diffusion process is supported by this majority carrier’s migration, and as a result, a net movement of charge carriers is created, causing the current to flow.

Conclusion

The SE20AFB-M3/6B single rectifier diode is a widely used diode due to its wide range of applications and the fact that it has an extremely low forward voltage drop. It is used in a number of applications, including power conditioning, motor control and communication systems, due to its high blocking voltage and low forward voltage drop. This diode operates on the principle of recombination and diffusion of majority and minority carriers. By providing a sufficient forward bias across the p-n junction of the diode, the majority carrier’s mobility increases and allows the flow of current.

The specific data is subject to PDF, and the above content is for reference

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