
Allicdata Part #: | SE20AFB-M3/6B-ND |
Manufacturer Part#: |
SE20AFB-M3/6B |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1.3A DO221AC |
More Detail: | Diode Standard 100V 1.3A (DC) Surface Mount DO-221... |
DataSheet: | ![]() |
Quantity: | 1000 |
14000 +: | $ 0.06148 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1.3A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 2A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.2µs |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 12pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-221AC, SMA Flat Leads |
Supplier Device Package: | DO-221AC (SlimSMA) |
Operating Temperature - Junction: | -55°C ~ 175°C |
Description
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SE20AFB-M3/6B Introduction
SE20AFB-M3/6B is a single rectifier diode, which is commonly used in different types of electrical and electronic applications. This type of diode can be used in different types of application fields, such as power conditioning, motor control, and communication systems. This device has a blocking voltage of 20A with a forward voltage drop of 2V.Application Field
SE20AFB-M3/6B rectifier diode is a device that is mostly used in power conditioning, motor control, and communication systems. Its blocking voltage of 20A makes it suitable for use in high-voltage applications and its low forward voltage drop of 2V enables it to be used in low-voltage applications. It can be used for various power conversion and drive applications, such as DC-DC converters, DC-AC inverters, rectifiers, and motor drives. It also finds application in wireless power transmission and communication systems.Working Principle
The SE20AFB-M3/6B rectifier diode is a p-n junction device that operates on the principle of recombination and diffusion of minority and majority carriers. When a sufficient forward bias is applied across the p-n junction, the depletion region between the p-n junction becomes thin and the electron’s and hole’s mobility increases, thus allowing the majority carriers to easily cross the junction region. The minority carrier diffusion process is supported by this majority carrier’s migration, and as a result, a net movement of charge carriers is created, causing the current to flow.Conclusion
The SE20AFB-M3/6B single rectifier diode is a widely used diode due to its wide range of applications and the fact that it has an extremely low forward voltage drop. It is used in a number of applications, including power conditioning, motor control and communication systems, due to its high blocking voltage and low forward voltage drop. This diode operates on the principle of recombination and diffusion of majority and minority carriers. By providing a sufficient forward bias across the p-n junction of the diode, the majority carrier’s mobility increases and allows the flow of current.The specific data is subject to PDF, and the above content is for reference
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