| Allicdata Part #: | SE20FGHM3/H-ND |
| Manufacturer Part#: |
SE20FGHM3/H |
| Price: | $ 0.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 400V 1.7A DO219AB |
| More Detail: | Diode Standard 400V 1.7A Surface Mount DO-219AB (S... |
| DataSheet: |  SE20FGHM3/H Datasheet/PDF |
| Quantity: | 1000 |
| 15000 +: | $ 0.06148 |
Specifications
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 400V |
| Current - Average Rectified (Io): | 1.7A |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 2A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 920ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 400V |
| Capacitance @ Vr, F: | 13pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-219AB |
| Supplier Device Package: | DO-219AB (SMF) |
| Operating Temperature - Junction: | -55°C ~ 175°C |
Description
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SE20FGHM3/H is a type of medium power, ultrafast rectifier diode and the latest of its kind in the semiconductor field. Designed especially to meet the needs of power electronics, these devices offer low leakage current, low VF, and high speed while maintaining good switching capability. Their ultrafast recovery time and minimal Vf makes them ideal for high frequency and high power applications. In this article, we will discuss the application field and working principle of SE20FGHM3/H.
Application Field
SE20FGHM3/H rectifier diodes have a wide range of applications in the field of power electronics. They are typically used in switching mode power supplies (SMPS), AC/DC converters, DC-DC converters, and RF power amplifiers. Their short recovery time helps prevent pulse distortion in high frequency applications and reduces the size of the snubber components. The low leakage current also helps reduce the power lost in switching applications.Moreover, SE20FGHM3/H are suitable for use in automotive applications due to their low Vf and EMI/EMC compliance. They can also be used in solar power inverters and motor control systems to obtain a high efficiency.Working Principle
The operation of SE20FGHM3/H rectifier diodes is based on the principle of p-n junction. When a forward bias is applied, the diode is said to be in its “on” state and a current flows through it. This current is limited by the forward voltage drop (Vf) of the device. When the forward bias voltage is removed, the device switches to its “off” state and the current ceases to flow.The reverse recovery time (trr) of SE20FGHM3/H semiconductors is one of their most important characteristics. This is the time it takes for the device to switch from its “on” to its “off” state. The shorter the trr, the faster the device can switch and it is an important factor in determining power efficiency. The trr of SE20FGHM3/H diodes is typically very short, making them ideal for high frequency applications.Conclusion
SE20FGHM3/H rectifier diodes are the latest of their kind in the semiconductor market and offer low leakage, low Vf, and fast switching times. Their short recovery time makes them suitable for high-frequency and high power applications. SE20FGHM3/H can be used in various power electronics applications, including SMPS, AC/DC converters, solar power inverters and motor control systems. Their operation is based on the principle of p-n junction.The specific data is subject to PDF, and the above content is for reference
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