SE9302 Allicdata Electronics
Allicdata Part #:

SE9302-ND

Manufacturer Part#:

SE9302

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN BIPOLAR TO220
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 10A...
DataSheet: SE9302 datasheetSE9302 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 150mA, 7.5A
Current - Collector Cutoff (Max): 200µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 7.5A, 3V
Power - Max: 70W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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Introduction

The SE9302 is a single bipolar junction transistor (BJT) that is widely used in electronic applications. Since its introduction in the early 2000s, the SE9302 has been used in a variety of consumer and medical devices, as it offers exceptional performance and reliability. The SE9302 is a versatile device and can be used as both an amplifier and switch.

Application Field

The SE9302 is used in many different applications, from consumer electronics and medical instruments, to automotive and aerospace systems. It is well suited for these applications due to its high current gain, low noise and low power consumption. Additionally, the SE9302 can be used in high speed switching applications and in RF circuits. In automotive and aerospace applications, the SE9302 is often used to control the flow of current, as it is able to withstand extremely high temperatures.

Working Principle

The SE9302 operates on the principle of electron holes. When a positive voltage is applied to the emitter of the transistor, electrons are drawn away from the emitter region and towards the collector. This creates a current path between the emitter and the collector, which can be used to control the flow of current. By varying the voltage applied to the emitter, the collector current can be adjusted. As the voltage is increased, more current flows through the collector. This is known as current gain and is one of the key performance characteristics of the SE9302.

Biasing Requirements

For optimal performance of the SE9302, biasing is required. Biasing a transistor involves setting the ideal current and voltage levels for the device to operate at its peak efficiency. Biasing can be achieved in various ways, such as using external resistors or voltage sources. It is important to ensure that the biasing levels are correctly set for the specific application.

Features

The SE9302 offers many advantages over other BJTs, including high current gain, low noise and low power consumption. Additionally, it has a wide temperature range, is able to withstand high current and is suitable for use in high speed switching applications. The SE9302 is available in a variety of package styles, allowing for easy integration into various PCB designs.

Conclusion

The SE9302 is a single bipolar junction transistor (BJT) that is ideal for use in a range of applications due to its high current gain, low noise and low power consumption. The device offers many features and can be used in a range of circuits, from high speed switching applications to RF systems. Additionally, it requires biasing for optimal performance and is available in various package styles.

The specific data is subject to PDF, and the above content is for reference

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