Allicdata Part #: | SF1004GC0G-ND |
Manufacturer Part#: |
SF1004G C0G |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 10A TO220AB |
More Detail: | Diode Standard 200V 10A Through Hole TO-220AB |
DataSheet: | SF1004G C0G Datasheet/PDF |
Quantity: | 1000 |
18000 +: | $ 0.16317 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 975mV @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 70pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The SF1004G C0G (Class 0 ceramic temperature-compensating multilayer capacitor) application field is generally used as a DC power supply filtering and AC signal circuit. It has high temperature stability, low distortion, and small size, and is suitable for a variety of special fields. For example, it can be used in wireless communications, automatic control, and digital signal processing systems, and so on.
The working principle of the SF1004G C0G is based on a multilayer ceramic capacitor. It is typically divided into four layers. The first two layers are ceramic dielectric layers that provide insulation between the electrodes while maintaining a high capacitance value. The third layer is a small layer of silver palladium that provides temperature compensation, temperature stability, and low distortion. The fourth layer is the internal electrode, which is a platinum layer and is responsible for providing a low effective series resistance. The combination of these layers makes the SF1004G C0G have a versatile range of applications, excellent temperature stability, low distortion, and a reasonable size for a variety of special requirements.
In terms of the structure of the SF1004G C0G capacitance, the device is an impedance-compensated ceramic capacitor with four layers. The two ceramic layers are connected in parallel and provide insulation between the two electrodes. The two electrodes are connected in series and are connected by a silver palladium layer, replacing the usual electrode-to-electrode insulation, which reduces the overall size of the capacitor. Furthermore, the internal electrodes are connected by a platinum layer, further reducing equivalent series resistance of the device. Thanks to this improved structure, the SF1004G C0G has high stability across a wide temperature range.
In terms of parameters, the SF1004G C0G has a high and stable capacitance, a dielectric constant of 5.3, a temperature coefficient of 0.1ppm/°C, a low equivalent series resistance, and the capacitance is compatible with a large range of voltage sweep. Additionally, the device has a small size, and is mainly used in the electronics industry in applications like wireless communications, automatic control, and digital signal processing systems.
To conclude, the SF1004G C0G is an ideal multilayer ceramic capacitor with a wide range of applications across multiple industries. It features a high dielectric constant, a low temperature coefficient, a low equivalent series resistance, and stable capacitance across a wide range of temperature and voltage. Thanks to its small size, this device is especially suited to applications in wireless communications, automatic control, and digital signal processing.
The specific data is subject to PDF, and the above content is for reference
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